Effect of ion mass on the evolution of extended defects during annealing of MeV ion-implanted p-type Si

S. Fatima; J. Wong-Leung; J. Fitz Gerald; C. Jagadish

doi:10.1063/1.123468

Effect of ion mass on the evolution of extended defects during annealing of MeV ion-implanted p-type Si

S. Fatima^*, J. Wong-Leung, J. Fitz Gerald, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

Evolution of extended defects during annealing of MeV ion-implanted p-type Si has been characterized using deep level transient spectroscopy and transmission electron microscopy. The p-type Si was implanted with Si, Ge, and Sn ions with varying energies and doses from 5×10¹² to 1×10¹⁴ cm^-2 then annealed at 800 °C for 15 min. For all implanted species, the critical dose for transformation from point to extended defects has been determined. The type of extended defects formed depends upon the mass of the implanted species even though the dose was adjusted to create a similar damage distribution for all implanted species.

Original language	English
Pages (from-to)	1141-1143
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	8
DOIs	https://doi.org/10.1063/1.123468
Publication status	Published - 1999

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title = "Effect of ion mass on the evolution of extended defects during annealing of MeV ion-implanted p-type Si",

abstract = "Evolution of extended defects during annealing of MeV ion-implanted p-type Si has been characterized using deep level transient spectroscopy and transmission electron microscopy. The p-type Si was implanted with Si, Ge, and Sn ions with varying energies and doses from 5×1012 to 1×1014 cm-2 then annealed at 800 °C for 15 min. For all implanted species, the critical dose for transformation from point to extended defects has been determined. The type of extended defects formed depends upon the mass of the implanted species even though the dose was adjusted to create a similar damage distribution for all implanted species.",

author = "S. Fatima and J. Wong-Leung and \{Fitz Gerald\}, J. and C. Jagadish",

year = "1999",

doi = "10.1063/1.123468",

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pages = "1141--1143",

journal = "Applied Physics Letters",

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T1 - Effect of ion mass on the evolution of extended defects during annealing of MeV ion-implanted p-type Si

AU - Fatima, S.

AU - Wong-Leung, J.

AU - Fitz Gerald, J.

AU - Jagadish, C.

PY - 1999

Y1 - 1999

N2 - Evolution of extended defects during annealing of MeV ion-implanted p-type Si has been characterized using deep level transient spectroscopy and transmission electron microscopy. The p-type Si was implanted with Si, Ge, and Sn ions with varying energies and doses from 5×1012 to 1×1014 cm-2 then annealed at 800 °C for 15 min. For all implanted species, the critical dose for transformation from point to extended defects has been determined. The type of extended defects formed depends upon the mass of the implanted species even though the dose was adjusted to create a similar damage distribution for all implanted species.

AB - Evolution of extended defects during annealing of MeV ion-implanted p-type Si has been characterized using deep level transient spectroscopy and transmission electron microscopy. The p-type Si was implanted with Si, Ge, and Sn ions with varying energies and doses from 5×1012 to 1×1014 cm-2 then annealed at 800 °C for 15 min. For all implanted species, the critical dose for transformation from point to extended defects has been determined. The type of extended defects formed depends upon the mass of the implanted species even though the dose was adjusted to create a similar damage distribution for all implanted species.

UR - https://www.scopus.com/pages/publications/0000740603

U2 - 10.1063/1.123468

DO - 10.1063/1.123468

M3 - Article

SN - 0003-6951

VL - 74

SP - 1141

EP - 1143

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

ER -

Effect of ion mass on the evolution of extended defects during annealing of MeV ion-implanted p-type Si

Abstract

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