Effect of ion species on implantation-produced disorder in GaN at liquid nitrogen temperature

S. O. Kucheyev; J. S. Williams; J. Zou; G. Li; C. Jagadish; A. I. Titov

doi:10.1016/S0168-583X(01)01309-X

Effect of ion species on implantation-produced disorder in GaN at liquid nitrogen temperature

S. O. Kucheyev^*, J. S. Williams, J. Zou, G. Li, C. Jagadish, A. I. Titov

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

The effect of ion species on the damage buildup behavior in wurtzite GaN under bombardment at liquid nitrogen temperature (LN₂) is studied by a combination of Rutherford backscattering/channeling spectrometry and transmission electron microscopy. Results show that both the density of collision cascades and chemical effects of implanted species affect the damage buildup behavior during bombardment at LN₂. In particular, an increase in the density of collision cascades (with increasing ion mass) strongly enhances the level of pre-amorphous lattice disorder in the crystal bulk at LN₂, which is similar to the situation during bombardment at room temperature.

Original language	English
Pages (from-to)	782-786
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	190
Issue number	1-4
DOIs	https://doi.org/10.1016/S0168-583X(01)01309-X
Publication status	Published - May 2002

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title = "Effect of ion species on implantation-produced disorder in GaN at liquid nitrogen temperature",

abstract = "The effect of ion species on the damage buildup behavior in wurtzite GaN under bombardment at liquid nitrogen temperature (LN2) is studied by a combination of Rutherford backscattering/channeling spectrometry and transmission electron microscopy. Results show that both the density of collision cascades and chemical effects of implanted species affect the damage buildup behavior during bombardment at LN2. In particular, an increase in the density of collision cascades (with increasing ion mass) strongly enhances the level of pre-amorphous lattice disorder in the crystal bulk at LN2, which is similar to the situation during bombardment at room temperature.",

keywords = "Collision cascade, Defects, GaN, Ion implantation",

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T1 - Effect of ion species on implantation-produced disorder in GaN at liquid nitrogen temperature

AU - Kucheyev, S. O.

AU - Williams, J. S.

AU - Zou, J.

AU - Li, G.

AU - Jagadish, C.

AU - Titov, A. I.

PY - 2002/5

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N2 - The effect of ion species on the damage buildup behavior in wurtzite GaN under bombardment at liquid nitrogen temperature (LN2) is studied by a combination of Rutherford backscattering/channeling spectrometry and transmission electron microscopy. Results show that both the density of collision cascades and chemical effects of implanted species affect the damage buildup behavior during bombardment at LN2. In particular, an increase in the density of collision cascades (with increasing ion mass) strongly enhances the level of pre-amorphous lattice disorder in the crystal bulk at LN2, which is similar to the situation during bombardment at room temperature.

AB - The effect of ion species on the damage buildup behavior in wurtzite GaN under bombardment at liquid nitrogen temperature (LN2) is studied by a combination of Rutherford backscattering/channeling spectrometry and transmission electron microscopy. Results show that both the density of collision cascades and chemical effects of implanted species affect the damage buildup behavior during bombardment at LN2. In particular, an increase in the density of collision cascades (with increasing ion mass) strongly enhances the level of pre-amorphous lattice disorder in the crystal bulk at LN2, which is similar to the situation during bombardment at room temperature.

KW - Collision cascade

KW - Defects

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KW - Ion implantation

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JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-4

ER -

Effect of ion species on implantation-produced disorder in GaN at liquid nitrogen temperature

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