Effect of irradiation temperature on post-irradiation strain levels in Ge xSi 1-x/Si strained layer heterostructures

J. M. Glasko; J. Zou; D. J.H. Cockayne; J. Fitz Gerald; R. G. Elliman

Effect of irradiation temperature on post-irradiation strain levels in Ge _xSi _1-x/Si strained layer heterostructures

J. M. Glasko^*, J. Zou, D. J.H. Cockayne, J. Fitz Gerald, R. G. Elliman

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

2 Citations (Scopus)

Abstract

Double crystal x-ray diffraction (DCXRD), transmission electron microscopy (TEM), and Rutherford backscattering spectroscopy and channelling (RBS-C) were used to study the effect of irradiation temperature and ion-energy on the perpendicular strain (ε _⊥) in Ge _xSi _1-xSi strained layer heterostructures. Room temperature irradiation was shown to increase ε _⊥. This effect was adequately modelled by assuming that irradiation caused additional strain due to excess interstitial distribution. The effects of irradiating at 253 °C were more complex, resulting in: a) an increase in ε _⊥ when the radiation damage profile was confined to the alloy layer; or b) a decrease in ε _⊥ when the damage profile extended through the alloy/substrate interface. Strain relaxation at elevated temperature is believed to be effected by loop-like defects which nucleate at or near the alloy/substrate interface during high energy irradiation.

Original language	English
Pages	142-145
Number of pages	4
Publication status	Published - 1996
Event	Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD - Canberra, Aust Duration: 8 Dec 1996 → 11 Dec 1996

Conference

Conference	Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD
City	Canberra, Aust
Period	8/12/96 → 11/12/96

Cite this

@conference{e988630aba4c441d8905a40037f38040,

title = "Effect of irradiation temperature on post-irradiation strain levels in Ge xSi 1-x/Si strained layer heterostructures",

abstract = "Double crystal x-ray diffraction (DCXRD), transmission electron microscopy (TEM), and Rutherford backscattering spectroscopy and channelling (RBS-C) were used to study the effect of irradiation temperature and ion-energy on the perpendicular strain (ε ⊥) in Ge xSi 1-xSi strained layer heterostructures. Room temperature irradiation was shown to increase ε ⊥. This effect was adequately modelled by assuming that irradiation caused additional strain due to excess interstitial distribution. The effects of irradiating at 253 °C were more complex, resulting in: a) an increase in ε ⊥ when the radiation damage profile was confined to the alloy layer; or b) a decrease in ε ⊥ when the damage profile extended through the alloy/substrate interface. Strain relaxation at elevated temperature is believed to be effected by loop-like defects which nucleate at or near the alloy/substrate interface during high energy irradiation.",

author = "Glasko, {J. M.} and J. Zou and Cockayne, {D. J.H.} and Gerald, {J. Fitz} and Elliman, {R. G.}",

year = "1996",

language = "English",

pages = "142--145",

note = "Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD ; Conference date: 08-12-1996 Through 11-12-1996",

}

Effect of irradiation temperature on post-irradiation strain levels in Ge _xSi _1-x/Si strained layer heterostructures. / Glasko, J. M.; Zou, J.; Cockayne, D. J.H. et al.
1996. 142-145 Paper presented at Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD, Canberra, Aust.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Effect of irradiation temperature on post-irradiation strain levels in Ge xSi 1-x/Si strained layer heterostructures

AU - Glasko, J. M.

AU - Zou, J.

AU - Cockayne, D. J.H.

AU - Gerald, J. Fitz

AU - Elliman, R. G.

PY - 1996

Y1 - 1996

N2 - Double crystal x-ray diffraction (DCXRD), transmission electron microscopy (TEM), and Rutherford backscattering spectroscopy and channelling (RBS-C) were used to study the effect of irradiation temperature and ion-energy on the perpendicular strain (ε ⊥) in Ge xSi 1-xSi strained layer heterostructures. Room temperature irradiation was shown to increase ε ⊥. This effect was adequately modelled by assuming that irradiation caused additional strain due to excess interstitial distribution. The effects of irradiating at 253 °C were more complex, resulting in: a) an increase in ε ⊥ when the radiation damage profile was confined to the alloy layer; or b) a decrease in ε ⊥ when the damage profile extended through the alloy/substrate interface. Strain relaxation at elevated temperature is believed to be effected by loop-like defects which nucleate at or near the alloy/substrate interface during high energy irradiation.

AB - Double crystal x-ray diffraction (DCXRD), transmission electron microscopy (TEM), and Rutherford backscattering spectroscopy and channelling (RBS-C) were used to study the effect of irradiation temperature and ion-energy on the perpendicular strain (ε ⊥) in Ge xSi 1-xSi strained layer heterostructures. Room temperature irradiation was shown to increase ε ⊥. This effect was adequately modelled by assuming that irradiation caused additional strain due to excess interstitial distribution. The effects of irradiating at 253 °C were more complex, resulting in: a) an increase in ε ⊥ when the radiation damage profile was confined to the alloy layer; or b) a decrease in ε ⊥ when the damage profile extended through the alloy/substrate interface. Strain relaxation at elevated temperature is believed to be effected by loop-like defects which nucleate at or near the alloy/substrate interface during high energy irradiation.

UR - http://www.scopus.com/inward/record.url?scp=0030361660&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0030361660

SP - 142

EP - 145

T2 - Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD

Y2 - 8 December 1996 through 11 December 1996

ER -

Effect of irradiation temperature on post-irradiation strain levels in Ge _xSi _1-x/Si strained layer heterostructures

Abstract

Conference

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