Effect of low energy implantation on the properties of Ti/Ni/Au contacts to n-SiC

Patrick W. Leech, Anthony S. Holland, Geoffrey K. Reeves, Yue Pan, Mark Ridgway, Phillip Tanner

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Abstract

    The effect of low energy implantation of P or C ions in 3C-SiC on the properties of Ti/Ni/Au contacts has been examined for doses in the range 1013-1015 ions/cm2. Measurements of specific contact resistance, ρ c, were performed using the two-contact circular test structure. The magnitude of ρc for the Ti/Ni/Au contacts on unimplanted SiC was 1.29 × 10-6 Ω.cm2. The value of ρc increased significantly at an implant dose of 1 × 1015 ions/cm2. The dependence of ρc on ion dose has been measured using both C and P implant species.

    Original languageEnglish
    Title of host publicationMaterials and Radiation Effects for Advanced Nuclear Technologies
    EditorsE. Marquis, S. K. Gill, C. Deo, K. Arakawa, Y. Zhang, F. Djurabekova, F. Soisson, K. Yasuda, G. Baldinozzi
    PublisherMaterials Research Society
    Pages39-44
    Number of pages6
    ISBN (Electronic)9781510806238
    DOIs
    Publication statusPublished - 2015
    Event2014 MRS Fall Meeting - Boston, United States
    Duration: 30 Nov 20145 Dec 2014

    Publication series

    NameMaterials Research Society Symposium Proceedings
    Volume1743
    ISSN (Print)0272-9172

    Conference

    Conference2014 MRS Fall Meeting
    Country/TerritoryUnited States
    CityBoston
    Period30/11/145/12/14

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