Effect of material structure on photoluminescence spectra from silicon nanocrystals

S. M. Orbons; M. G. Spooner; R. G. Elliman

doi:10.1063/1.1790058

Effect of material structure on photoluminescence spectra from silicon nanocrystals

S. M. Orbons, M. G. Spooner, R. G. Elliman^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

Commercially prepared (100) oriented silicon wafers were oxidized to produce SiO₂ layers of 5 μm, 970 nm, 650 nm and 103 nm. Each sample was annealed at 1050°C for 1 h in a forming gas ambient. The photoluminescence (PL) emission was collected with f4 optics consisting of two matched plano-convex lens of 50 mm diameter and 200 mm focal length, giving a collection angle of up to ±7°. The distortions were shown to be simple consequence of the wavelength dependent reflectivity of the sample structure.

Original language	English
Pages (from-to)	4650-4652
Number of pages	3
Journal	Journal of Applied Physics
Volume	96
Issue number	8
DOIs	https://doi.org/10.1063/1.1790058
Publication status	Published - 15 Oct 2004

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abstract = "Commercially prepared (100) oriented silicon wafers were oxidized to produce SiO2 layers of 5 μm, 970 nm, 650 nm and 103 nm. Each sample was annealed at 1050°C for 1 h in a forming gas ambient. The photoluminescence (PL) emission was collected with f4 optics consisting of two matched plano-convex lens of 50 mm diameter and 200 mm focal length, giving a collection angle of up to ±7°. The distortions were shown to be simple consequence of the wavelength dependent reflectivity of the sample structure.",

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AU - Elliman, R. G.

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N2 - Commercially prepared (100) oriented silicon wafers were oxidized to produce SiO2 layers of 5 μm, 970 nm, 650 nm and 103 nm. Each sample was annealed at 1050°C for 1 h in a forming gas ambient. The photoluminescence (PL) emission was collected with f4 optics consisting of two matched plano-convex lens of 50 mm diameter and 200 mm focal length, giving a collection angle of up to ±7°. The distortions were shown to be simple consequence of the wavelength dependent reflectivity of the sample structure.

AB - Commercially prepared (100) oriented silicon wafers were oxidized to produce SiO2 layers of 5 μm, 970 nm, 650 nm and 103 nm. Each sample was annealed at 1050°C for 1 h in a forming gas ambient. The photoluminescence (PL) emission was collected with f4 optics consisting of two matched plano-convex lens of 50 mm diameter and 200 mm focal length, giving a collection angle of up to ±7°. The distortions were shown to be simple consequence of the wavelength dependent reflectivity of the sample structure.

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DO - 10.1063/1.1790058

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JF - Journal of Applied Physics

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ER -

Effect of material structure on photoluminescence spectra from silicon nanocrystals

Abstract

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