Effect of MeV O2+ implantation on the reactive ion etch rate of LiTaO3

Patrick W. Leech; Mark C. Ridgway

doi:10.1016/S0168-583X(99)00578-9

Effect of MeV O²⁺ implantation on the reactive ion etch rate of LiTaO₃

Patrick W. Leech, Mark C. Ridgway

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Abstract

The etch rate of LiTaO₃ in CF₄/CHF₃ plasmas was increased by approximately 50% by prior implantation with MeV O²⁺ ions. The etch rate of LiTaO₃ was shown to increase with ion dose, indicating an effect of the implant-induced nuclear damage on the etch process. In general terms, the reactive ion etching of LiTaO₃ in CF₄/CHF₃ plasmas has been identified as a process of ion-enhanced chemical etching.

Original language	English
Pages (from-to)	187-190
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	159
Issue number	3
DOIs	https://doi.org/10.1016/S0168-583X(99)00578-9
Publication status	Published - Nov 1999

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title = "Effect of MeV O2+ implantation on the reactive ion etch rate of LiTaO3",

abstract = "The etch rate of LiTaO3 in CF4/CHF3 plasmas was increased by approximately 50% by prior implantation with MeV O2+ ions. The etch rate of LiTaO3 was shown to increase with ion dose, indicating an effect of the implant-induced nuclear damage on the etch process. In general terms, the reactive ion etching of LiTaO3 in CF4/CHF3 plasmas has been identified as a process of ion-enhanced chemical etching.",

author = "Leech, {Patrick W.} and Ridgway, {Mark C.}",

year = "1999",

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T1 - Effect of MeV O2+ implantation on the reactive ion etch rate of LiTaO3

AU - Leech, Patrick W.

AU - Ridgway, Mark C.

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N2 - The etch rate of LiTaO3 in CF4/CHF3 plasmas was increased by approximately 50% by prior implantation with MeV O2+ ions. The etch rate of LiTaO3 was shown to increase with ion dose, indicating an effect of the implant-induced nuclear damage on the etch process. In general terms, the reactive ion etching of LiTaO3 in CF4/CHF3 plasmas has been identified as a process of ion-enhanced chemical etching.

AB - The etch rate of LiTaO3 in CF4/CHF3 plasmas was increased by approximately 50% by prior implantation with MeV O2+ ions. The etch rate of LiTaO3 was shown to increase with ion dose, indicating an effect of the implant-induced nuclear damage on the etch process. In general terms, the reactive ion etching of LiTaO3 in CF4/CHF3 plasmas has been identified as a process of ion-enhanced chemical etching.

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U2 - 10.1016/S0168-583X(99)00578-9

DO - 10.1016/S0168-583X(99)00578-9

M3 - Article

SN - 0168-583X

VL - 159

SP - 187

EP - 190

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 3

ER -

Effect of MeV O²⁺ implantation on the reactive ion etch rate of LiTaO₃

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