Effect of Microcavity Structures on the Photoluminescence of Silicon Nanocrystals

Marc G. Spooner; Timothy M. Walsh; Robert G. Elliman

doi:10.1557/proc-770-i1.8

Effect of Microcavity Structures on the Photoluminescence of Silicon Nanocrystals

Marc G. Spooner^*, Timothy M. Walsh, Robert G. Elliman

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

Optical microcavity structures containing Si nanocrystals are fabricated by plasma enhanced chemical vapour deposition (PECVD) of SiO₂ Si ₃N₄ and SiO_x layers. The nanocrystals are formed within Si-rich oxide layers (SiO_x) by precipitation and growth, and the microcavity structures defined by two parallel distributed Bragg mirrors (DBM) made from either alternate SiO₂/Si ₃N₄ layers or alternate SiO₂/SiO_x layers. In the latter case, Si nanocrystal layers form part of the DBM structure thereby providing a distributed emission source. The optical emission from these and related structures are examined and compared with that from isolated nanocrystal layers.

Original language	English
Pages (from-to)	51-56
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	770
DOIs	https://doi.org/10.1557/proc-770-i1.8
Publication status	Published - 2003
Event	Optoelectronics of Group-IV-Based Materials - San Francisco, CA, United States Duration: 21 Apr 2003 → 24 Apr 2003

Access to Document

10.1557/proc-770-i1.8

Cite this

@article{1d3f03f7a6e9438aa6097dd2be12849a,

title = "Effect of Microcavity Structures on the Photoluminescence of Silicon Nanocrystals",

abstract = "Optical microcavity structures containing Si nanocrystals are fabricated by plasma enhanced chemical vapour deposition (PECVD) of SiO2 Si 3N4 and SiOx layers. The nanocrystals are formed within Si-rich oxide layers (SiOx) by precipitation and growth, and the microcavity structures defined by two parallel distributed Bragg mirrors (DBM) made from either alternate SiO2/Si 3N4 layers or alternate SiO2/SiOx layers. In the latter case, Si nanocrystal layers form part of the DBM structure thereby providing a distributed emission source. The optical emission from these and related structures are examined and compared with that from isolated nanocrystal layers.",

author = "Spooner, {Marc G.} and Walsh, {Timothy M.} and Elliman, {Robert G.}",

year = "2003",

doi = "10.1557/proc-770-i1.8",

language = "English",

volume = "770",

pages = "51--56",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Optoelectronics of Group-IV-Based Materials ; Conference date: 21-04-2003 Through 24-04-2003",

}

TY - JOUR

T1 - Effect of Microcavity Structures on the Photoluminescence of Silicon Nanocrystals

AU - Spooner, Marc G.

AU - Walsh, Timothy M.

AU - Elliman, Robert G.

PY - 2003

Y1 - 2003

N2 - Optical microcavity structures containing Si nanocrystals are fabricated by plasma enhanced chemical vapour deposition (PECVD) of SiO2 Si 3N4 and SiOx layers. The nanocrystals are formed within Si-rich oxide layers (SiOx) by precipitation and growth, and the microcavity structures defined by two parallel distributed Bragg mirrors (DBM) made from either alternate SiO2/Si 3N4 layers or alternate SiO2/SiOx layers. In the latter case, Si nanocrystal layers form part of the DBM structure thereby providing a distributed emission source. The optical emission from these and related structures are examined and compared with that from isolated nanocrystal layers.

AB - Optical microcavity structures containing Si nanocrystals are fabricated by plasma enhanced chemical vapour deposition (PECVD) of SiO2 Si 3N4 and SiOx layers. The nanocrystals are formed within Si-rich oxide layers (SiOx) by precipitation and growth, and the microcavity structures defined by two parallel distributed Bragg mirrors (DBM) made from either alternate SiO2/Si 3N4 layers or alternate SiO2/SiOx layers. In the latter case, Si nanocrystal layers form part of the DBM structure thereby providing a distributed emission source. The optical emission from these and related structures are examined and compared with that from isolated nanocrystal layers.

UR - http://www.scopus.com/inward/record.url?scp=1542364493&partnerID=8YFLogxK

U2 - 10.1557/proc-770-i1.8

DO - 10.1557/proc-770-i1.8

M3 - Conference article

AN - SCOPUS:1542364493

SN - 0272-9172

VL - 770

SP - 51

EP - 56

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Optoelectronics of Group-IV-Based Materials

Y2 - 21 April 2003 through 24 April 2003

ER -

Effect of Microcavity Structures on the Photoluminescence of Silicon Nanocrystals

Abstract

Access to Document

Other files and links

Fingerprint

Cite this