Effect of Rapid Thermal Annealing on the Electrical Properties of Ion-Beam-Synthesized Oxide Layers Using 12 keV O2+ Bombardment of Si

Effect of Rapid Thermal Annealing on the Electrical Properties of Ion-Beam-Synthesized Oxide Layers Using 12 keV O₂⁺ Bombardment of Si

Prakash Deenapanray

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1087-1093
Journal	Surface and Interface Analysis
Volume	31
Publication status	Published - 2001

@article{f60f57f19b044f90b99b021f9203588f,

title = "Effect of Rapid Thermal Annealing on the Electrical Properties of Ion-Beam-Synthesized Oxide Layers Using 12 keV O2+ Bombardment of Si",

author = "Prakash Deenapanray",

year = "2001",

language = "English",

volume = "31",

pages = "1087--1093",

journal = "Surface and Interface Analysis",

publisher = "John Wiley & Sons Inc.",

}