Effect of rapid thermal annealing on the ordering of AlInP grown by metal-organic vapor-phase epitaxy

Xiaohong Tang; Jinghua Zhao; Mee Koy Chin; Ting Mei; Zongyou Yin; Sentosa Deny; An Yan Du

doi:10.1063/1.2120897

Effect of rapid thermal annealing on the ordering of AlInP grown by metal-organic vapor-phase epitaxy

Xiaohong Tang^*, Jinghua Zhao, Mee Koy Chin, Ting Mei, Zongyou Yin, Sentosa Deny, An Yan Du

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Spontaneous CuPt ordering is observed in Alx In1-x P layers grown by metal-organic vapor-phase epitaxy in pure nitrogen ambient with tertiarybutylphosphine as phosphorus precursor. Changes of the degree of ordering of the Alx In1-x P epilayer versus annealing temperature have been investigated by using photoluminescence and transmission electron diffraction. The degree of ordering of the Alx In1-x P layers is reduced after annealing the sample at a temperature higher than the sample growth temperature. It becomes completely disordered when the annealing temperature reaches 900 °C and above.

Original language	English
Article number	181906
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	18
DOIs	https://doi.org/10.1063/1.2120897
Publication status	Published - 31 Oct 2005
Externally published	Yes

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title = "Effect of rapid thermal annealing on the ordering of AlInP grown by metal-organic vapor-phase epitaxy",

abstract = "Spontaneous CuPt ordering is observed in Alx In1-x P layers grown by metal-organic vapor-phase epitaxy in pure nitrogen ambient with tertiarybutylphosphine as phosphorus precursor. Changes of the degree of ordering of the Alx In1-x P epilayer versus annealing temperature have been investigated by using photoluminescence and transmission electron diffraction. The degree of ordering of the Alx In1-x P layers is reduced after annealing the sample at a temperature higher than the sample growth temperature. It becomes completely disordered when the annealing temperature reaches 900 °C and above.",

author = "Xiaohong Tang and Jinghua Zhao and Chin, {Mee Koy} and Ting Mei and Zongyou Yin and Sentosa Deny and Du, {An Yan}",

year = "2005",

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doi = "10.1063/1.2120897",

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T1 - Effect of rapid thermal annealing on the ordering of AlInP grown by metal-organic vapor-phase epitaxy

AU - Tang, Xiaohong

AU - Zhao, Jinghua

AU - Chin, Mee Koy

AU - Mei, Ting

AU - Yin, Zongyou

AU - Deny, Sentosa

AU - Du, An Yan

PY - 2005/10/31

Y1 - 2005/10/31

N2 - Spontaneous CuPt ordering is observed in Alx In1-x P layers grown by metal-organic vapor-phase epitaxy in pure nitrogen ambient with tertiarybutylphosphine as phosphorus precursor. Changes of the degree of ordering of the Alx In1-x P epilayer versus annealing temperature have been investigated by using photoluminescence and transmission electron diffraction. The degree of ordering of the Alx In1-x P layers is reduced after annealing the sample at a temperature higher than the sample growth temperature. It becomes completely disordered when the annealing temperature reaches 900 °C and above.

AB - Spontaneous CuPt ordering is observed in Alx In1-x P layers grown by metal-organic vapor-phase epitaxy in pure nitrogen ambient with tertiarybutylphosphine as phosphorus precursor. Changes of the degree of ordering of the Alx In1-x P epilayer versus annealing temperature have been investigated by using photoluminescence and transmission electron diffraction. The degree of ordering of the Alx In1-x P layers is reduced after annealing the sample at a temperature higher than the sample growth temperature. It becomes completely disordered when the annealing temperature reaches 900 °C and above.

UR - http://www.scopus.com/inward/record.url?scp=27344448281&partnerID=8YFLogxK

U2 - 10.1063/1.2120897

DO - 10.1063/1.2120897

M3 - Article

SN - 0003-6951

VL - 87

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EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

M1 - 181906

ER -

Effect of rapid thermal annealing on the ordering of AlInP grown by metal-organic vapor-phase epitaxy

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