Effect of strain and strain-gradients on the crystallisation kinetics of Si1-xGex alloy layers

Per Kringhoj*, Robert G. Elliman, John L. Hansen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

8 Citations (Scopus)

Abstract

A comparison of strain relief in SiGe alloy layers during high temperature annealing and solid phase epitaxial crystallisation (SPEC) has shown that layers which are thermodynamically stable are also fully strained following SPEC, whereas metastable layers that relax at high temperatures also relax during SPEC. This is illustrated by the fact that a uniform SiGe layer with x=0.085 is stable during annealing at 1100°C for 60 sec and is fully strained following SPEC. In contrast, a uniform layer with x=0.17, which was fully strained as-grown by molecular beam epitaxy (MBE), is shown to relax during high temperature annealing and during SPEC. A depth dependent SPEC velocity is observed for metastable layers, with a decrease in velocity as the alloy layer begins to crystallise and an increase in velocity as strain relaxation proceeds.

Original languageEnglish
Title of host publicationCrystallization and Related Phenomena in Amorphous Materials
EditorsMatthew Libera, Tony E. Haynes, Peggy Cebe, James E. Dickinson Jr.
PublisherPubl by Materials Research Society
Pages461-466
Number of pages6
ISBN (Print)1558992200
Publication statusPublished - 1994
EventProceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA
Duration: 29 Nov 19932 Dec 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume321
ISSN (Print)0272-9172

Conference

ConferenceProceedings of the 1993 Fall Meeting of the Materials Research Society
CityBoston, MA, USA
Period29/11/932/12/93

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