Effect of stress on impurity-free quantum well intermixing

Prakash N.K. Deenapanray*, C. Jagadish

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    25 Citations (Scopus)

    Abstract

    Impurity-free interdiffusion of GaAs/AlGaAs quantum wells was investigated for SiOx capping layers grown by plasma-enhanced chemical vapor deposition. Dielectric layers were deposited for various nitrous oxide flow rates, N(30 sccm ≤ N ≤ 710 sccm), while maintaining a fixed silane flow rate. The oxygen content, x, of the dielectric increased monotonically with N and stoichiometric oxides were deposited above N = 350 sccm. However, the blue shift in quantum wells did not follow a similar trend as the variation of x. Following rapid thermal annealing, the blue shift increased with the increasing N to exhibit a maximum in the range 100 sccm < N < 200 sccm. Any further increase in N resulted in a decrease in blue shift, which reached an almost constant value for N > 350 sccm. It is shown that this maximum in the blue shift is due to the stress imposed by the SiOx layer on the GaAs/AlGaAs heterostructure.

    Original languageEnglish
    Pages (from-to)G11-G13
    JournalElectrochemical and Solid-State Letters
    Volume4
    Issue number2
    DOIs
    Publication statusPublished - Feb 2001

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