TY - JOUR
T1 - Effect of stress on impurity-free quantum well intermixing
AU - Deenapanray, Prakash N.K.
AU - Jagadish, C.
PY - 2001/2
Y1 - 2001/2
N2 - Impurity-free interdiffusion of GaAs/AlGaAs quantum wells was investigated for SiOx capping layers grown by plasma-enhanced chemical vapor deposition. Dielectric layers were deposited for various nitrous oxide flow rates, N(30 sccm ≤ N ≤ 710 sccm), while maintaining a fixed silane flow rate. The oxygen content, x, of the dielectric increased monotonically with N and stoichiometric oxides were deposited above N = 350 sccm. However, the blue shift in quantum wells did not follow a similar trend as the variation of x. Following rapid thermal annealing, the blue shift increased with the increasing N to exhibit a maximum in the range 100 sccm < N < 200 sccm. Any further increase in N resulted in a decrease in blue shift, which reached an almost constant value for N > 350 sccm. It is shown that this maximum in the blue shift is due to the stress imposed by the SiOx layer on the GaAs/AlGaAs heterostructure.
AB - Impurity-free interdiffusion of GaAs/AlGaAs quantum wells was investigated for SiOx capping layers grown by plasma-enhanced chemical vapor deposition. Dielectric layers were deposited for various nitrous oxide flow rates, N(30 sccm ≤ N ≤ 710 sccm), while maintaining a fixed silane flow rate. The oxygen content, x, of the dielectric increased monotonically with N and stoichiometric oxides were deposited above N = 350 sccm. However, the blue shift in quantum wells did not follow a similar trend as the variation of x. Following rapid thermal annealing, the blue shift increased with the increasing N to exhibit a maximum in the range 100 sccm < N < 200 sccm. Any further increase in N resulted in a decrease in blue shift, which reached an almost constant value for N > 350 sccm. It is shown that this maximum in the blue shift is due to the stress imposed by the SiOx layer on the GaAs/AlGaAs heterostructure.
UR - http://www.scopus.com/inward/record.url?scp=0035262735&partnerID=8YFLogxK
U2 - 10.1149/1.1339242
DO - 10.1149/1.1339242
M3 - Article
SN - 1099-0062
VL - 4
SP - G11-G13
JO - Electrochemical and Solid-State Letters
JF - Electrochemical and Solid-State Letters
IS - 2
ER -