Abstract
The influence of the proximity of a high refractive index substrate on the luminescence of Si nanocrystals was investigated by time-integrated and time-resolved photoluminescence. The luminescence yield was found to be ∼2.5 times larger for emitters distanced from the substrate compared to those in proximity with the substrate, while luminescence decay measurements revealed only a slight increase in the luminescence lifetime (∼15%). Results are discussed in terms of local density of optical modes surrounding a pointlike light emitter with important implications for the collection efficiency of luminescence and the estimation of internal quantum efficiency for a quantum dot.
| Original language | English |
|---|---|
| Article number | 111124 |
| Journal | Applied Physics Letters |
| Volume | 89 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2006 |
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