TY - JOUR
T1 - Effect of temperature and incident ion energy on nanostructure formation on silicon exposed to helium plasma
AU - Thompson, Matt
AU - Shi, Quan
AU - Kajita, Shin
AU - Ohno, Noriyasu
AU - Corr, Cormac
N1 - Publisher Copyright:
© 2020 Wiley-VCH GmbH
PY - 2020/12
Y1 - 2020/12
N2 - Helium plasma can be used to deliver low-energy (<100 eV) helium ions to stimulate the growth of nanostructures on silicon surfaces. This can produce a wide range of surface features including nanoscale roughening, nanowires and porous structures. In this study, nanostructure sizes varied from ∼10 to over 100 nm in diameter. The effect of these structures on surface reflectivity for photovoltaic and photocatalytic applications is also investigated. Broadband suppression of photoreflectivity is achieved across the 300–1,200 nm wavelength range studied for silicon exposed to helium plasma at 600°C, with an average reflectivity of 3.2% and 2.9% for incident helium ion energies of 42 and 62 eV, respectively.
AB - Helium plasma can be used to deliver low-energy (<100 eV) helium ions to stimulate the growth of nanostructures on silicon surfaces. This can produce a wide range of surface features including nanoscale roughening, nanowires and porous structures. In this study, nanostructure sizes varied from ∼10 to over 100 nm in diameter. The effect of these structures on surface reflectivity for photovoltaic and photocatalytic applications is also investigated. Broadband suppression of photoreflectivity is achieved across the 300–1,200 nm wavelength range studied for silicon exposed to helium plasma at 600°C, with an average reflectivity of 3.2% and 2.9% for incident helium ion energies of 42 and 62 eV, respectively.
UR - http://www.scopus.com/inward/record.url?scp=85090197194&partnerID=8YFLogxK
U2 - 10.1002/ppap.202000126
DO - 10.1002/ppap.202000126
M3 - Article
SN - 1612-8850
VL - 17
JO - Plasma Processes and Polymers
JF - Plasma Processes and Polymers
IS - 12
M1 - 2000126
ER -