Effect of V/III ratio on the structural quality of InAs nanowires

Zhi Zhang; Zhen Yu Lu; Hong Yi Xu; Ping Ping Chen; Wei Lu; Jin Zou

doi:10.1109/COMMAD.2014.7038642

Effect of V/III ratio on the structural quality of InAs nanowires

Zhi Zhang, Zhen Yu Lu, Hong Yi Xu, Ping Ping Chen, Wei Lu, Jin Zou^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

In this study, the effect of V/III ratio on the structural quality of Au-catalyzed InAs nanowires grown by molecular beam epitaxy is investigated. It is found that, by tuning the V/III ratio, the structural quality of InAs nanowires can be controlled, and defect-free wurtzite structured InAs nanowires have been achieved under low V/III ratio growth.

Original language	English
Title of host publication	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014
Editors	Mariusz Martyniuk, Lorenzo Faraone
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	24-26
Number of pages	3
ISBN (Electronic)	9781479968671
DOIs	https://doi.org/10.1109/COMMAD.2014.7038642
Publication status	Published - 10 Feb 2014
Externally published	Yes
Event	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 - Perth, Australia Duration: 14 Dec 2014 → 17 Dec 2014

Publication series

Name	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014
Publisher	IEEE
ISSN (Print)	1097-2137
ISSN (Electronic)	2377-5505

Conference

Conference	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014
Country/Territory	Australia
City	Perth
Period	14/12/14 → 17/12/14

Access to Document

10.1109/COMMAD.2014.7038642

Cite this

Zhang, Z., Lu, Z. Y., Xu, H. Y., Chen, P. P., Lu, W., & Zou, J. (2014). Effect of V/III ratio on the structural quality of InAs nanowires. In M. Martyniuk, & L. Faraone (Eds.), 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 (pp. 24-26). (2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/COMMAD.2014.7038642

Zhang, Zhi ; Lu, Zhen Yu ; Xu, Hong Yi et al. / Effect of V/III ratio on the structural quality of InAs nanowires. 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014. editor / Mariusz Martyniuk ; Lorenzo Faraone. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 24-26 (2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014).

@inproceedings{1fe4455c0af1400b9a9e3969a99a7fdc,

title = "Effect of V/III ratio on the structural quality of InAs nanowires",

abstract = "In this study, the effect of V/III ratio on the structural quality of Au-catalyzed InAs nanowires grown by molecular beam epitaxy is investigated. It is found that, by tuning the V/III ratio, the structural quality of InAs nanowires can be controlled, and defect-free wurtzite structured InAs nanowires have been achieved under low V/III ratio growth.",

keywords = "Electron microscopy, InAs nanowires, MBE",

author = "Zhi Zhang and Lu, {Zhen Yu} and Xu, {Hong Yi} and Chen, {Ping Ping} and Wei Lu and Jin Zou",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 ; Conference date: 14-12-2014 Through 17-12-2014",

year = "2014",

month = feb,

day = "10",

doi = "10.1109/COMMAD.2014.7038642",

language = "English",

series = "2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "24--26",

editor = "Mariusz Martyniuk and Lorenzo Faraone",

booktitle = "2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014",

address = "United States",

}

Zhang, Z, Lu, ZY, Xu, HY, Chen, PP, Lu, W & Zou, J 2014, Effect of V/III ratio on the structural quality of InAs nanowires. in M Martyniuk & L Faraone (eds), 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014. 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014, Institute of Electrical and Electronics Engineers Inc., pp. 24-26, 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014, Perth, Australia, 14/12/14. https://doi.org/10.1109/COMMAD.2014.7038642

Effect of V/III ratio on the structural quality of InAs nanowires. / Zhang, Zhi; Lu, Zhen Yu; Xu, Hong Yi et al.
2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014. ed. / Mariusz Martyniuk; Lorenzo Faraone. Institute of Electrical and Electronics Engineers Inc., 2014. p. 24-26 (2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Effect of V/III ratio on the structural quality of InAs nanowires

AU - Zhang, Zhi

AU - Lu, Zhen Yu

AU - Xu, Hong Yi

AU - Chen, Ping Ping

AU - Lu, Wei

AU - Zou, Jin

PY - 2014/2/10

Y1 - 2014/2/10

N2 - In this study, the effect of V/III ratio on the structural quality of Au-catalyzed InAs nanowires grown by molecular beam epitaxy is investigated. It is found that, by tuning the V/III ratio, the structural quality of InAs nanowires can be controlled, and defect-free wurtzite structured InAs nanowires have been achieved under low V/III ratio growth.

AB - In this study, the effect of V/III ratio on the structural quality of Au-catalyzed InAs nanowires grown by molecular beam epitaxy is investigated. It is found that, by tuning the V/III ratio, the structural quality of InAs nanowires can be controlled, and defect-free wurtzite structured InAs nanowires have been achieved under low V/III ratio growth.

KW - Electron microscopy

KW - InAs nanowires

KW - MBE

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U2 - 10.1109/COMMAD.2014.7038642

DO - 10.1109/COMMAD.2014.7038642

M3 - Conference contribution

AN - SCOPUS:84949927717

T3 - 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014

SP - 24

EP - 26

BT - 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014

A2 - Martyniuk, Mariusz

A2 - Faraone, Lorenzo

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014

Y2 - 14 December 2014 through 17 December 2014

ER -

Zhang Z, Lu ZY, Xu HY, Chen PP, Lu W, Zou J. Effect of V/III ratio on the structural quality of InAs nanowires. In Martyniuk M, Faraone L, editors, 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 24-26. (2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014). doi: 10.1109/COMMAD.2014.7038642

Effect of V/III ratio on the structural quality of InAs nanowires

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