Effective SiNx:H Capping Layers on 1-nm Al2O3 for p(+) Surface Passivation

Wensheng Liang, Klaus Weber, Andrew Thomson

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1405-1412
Journal	IEEE Journal of Photovoltaics
Volume	4
Issue number	6
DOIs	https://doi.org/10.1109/JPHOTOV.2014.2344757
Publication status	Published - 2014

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title = "Effective SiNx:H Capping Layers on 1-nm Al2O3 for p(+) Surface Passivation",

author = "Wensheng Liang and Klaus Weber and Andrew Thomson",

year = "2014",

doi = "10.1109/JPHOTOV.2014.2344757",

language = "English",

volume = "4",

pages = "1405--1412",

journal = "IEEE Journal of Photovoltaics",

publisher = "IEEE",

number = "6",

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TY - JOUR

T1 - Effective SiNx:H Capping Layers on 1-nm Al2O3 for p(+) Surface Passivation

AU - Liang, Wensheng

AU - Weber, Klaus

AU - Thomson, Andrew

PY - 2014

Y1 - 2014

UR - https://www.scopus.com/pages/publications/84906375569

U2 - 10.1109/JPHOTOV.2014.2344757

DO - 10.1109/JPHOTOV.2014.2344757

M3 - Article

VL - 4

SP - 1405

EP - 1412

JO - IEEE Journal of Photovoltaics

JF - IEEE Journal of Photovoltaics

IS - 6

ER -