Effects of annealing on the properties of In0.5Ga 0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors

G. Jolley; B. Xiao; L. Fu; H. H. Tan; C. Jagadish

doi:10.1088/0022-3727/42/11/115103

Effects of annealing on the properties of In_0.5Ga _0.5As/GaAs/Al_0.2Ga_0.8As quantum dots-in-a-well infrared photodetectors

G. Jolley^*, B. Xiao, L. Fu, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We report on the device parameters of In_0.5Ga _0.5As/GaAs/Al_0.2Ga_0.8As quantum-dots- in-a-well infrared photodetectors annealed at various temperatures from 700 to 850 °C. The temperature dependent dark current-voltage characteristics are found to have a very weak dependence on the annealing temperature, revealing some interesting properties of the dark current mechanisms.

Original language	English
Article number	115103
Journal	Journal Physics D: Applied Physics
Volume	42
Issue number	11
DOIs	https://doi.org/10.1088/0022-3727/42/11/115103
Publication status	Published - 2009

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title = "Effects of annealing on the properties of In0.5Ga 0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors",

abstract = "We report on the device parameters of In0.5Ga 0.5As/GaAs/Al0.2Ga0.8As quantum-dots- in-a-well infrared photodetectors annealed at various temperatures from 700 to 850 °C. The temperature dependent dark current-voltage characteristics are found to have a very weak dependence on the annealing temperature, revealing some interesting properties of the dark current mechanisms.",

author = "G. Jolley and B. Xiao and L. Fu and Tan, {H. H.} and C. Jagadish",

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AU - Jolley, G.

AU - Xiao, B.

AU - Fu, L.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2009

Y1 - 2009

N2 - We report on the device parameters of In0.5Ga 0.5As/GaAs/Al0.2Ga0.8As quantum-dots- in-a-well infrared photodetectors annealed at various temperatures from 700 to 850 °C. The temperature dependent dark current-voltage characteristics are found to have a very weak dependence on the annealing temperature, revealing some interesting properties of the dark current mechanisms.

AB - We report on the device parameters of In0.5Ga 0.5As/GaAs/Al0.2Ga0.8As quantum-dots- in-a-well infrared photodetectors annealed at various temperatures from 700 to 850 °C. The temperature dependent dark current-voltage characteristics are found to have a very weak dependence on the annealing temperature, revealing some interesting properties of the dark current mechanisms.

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DO - 10.1088/0022-3727/42/11/115103

M3 - Article

SN - 0022-3727

VL - 42

JO - Journal Physics D: Applied Physics

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ER -

Effects of annealing on the properties of In_0.5Ga _0.5As/GaAs/Al_0.2Ga_0.8As quantum dots-in-a-well infrared photodetectors

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