Effects of carbon on ion-implantation-induced disorder in GaN

S. O. Kucheyev; J. E. Bradby; C. P. Li; S. Ruffell; T. Van Buuren; T. E. Felter

doi:10.1063/1.2827587

Effects of carbon on ion-implantation-induced disorder in GaN

S. O. Kucheyev^*, J. E. Bradby, C. P. Li, S. Ruffell, T. Van Buuren, T. E. Felter

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Abstract

Wurtzite GaN films bombarded with 40 keV C ions to high doses (5× 1017 and 1× 1018 cm-2) are studied by a combination of Rutherford backscattering/channeling spectrometry, transmission electron microscopy, and soft x-ray absorption spectroscopy. Results show that, contrary to other ion species, implanted C forms nitrilelike carbon-nitride bonds (CN) and suppresses ion-beam-induced material decomposition involving the formation and agglomeration of 5-nm -large N2 gas bubbles.

Original language	English
Article number	261905
Journal	Applied Physics Letters
Volume	91
Issue number	26
DOIs	https://doi.org/10.1063/1.2827587
Publication status	Published - 2007

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abstract = "Wurtzite GaN films bombarded with 40 keV C ions to high doses (5× 1017 and 1× 1018 cm-2) are studied by a combination of Rutherford backscattering/channeling spectrometry, transmission electron microscopy, and soft x-ray absorption spectroscopy. Results show that, contrary to other ion species, implanted C forms nitrilelike carbon-nitride bonds (CN) and suppresses ion-beam-induced material decomposition involving the formation and agglomeration of 5-nm -large N2 gas bubbles.",

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AU - Kucheyev, S. O.

AU - Bradby, J. E.

AU - Li, C. P.

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AU - Van Buuren, T.

AU - Felter, T. E.

PY - 2007

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AB - Wurtzite GaN films bombarded with 40 keV C ions to high doses (5× 1017 and 1× 1018 cm-2) are studied by a combination of Rutherford backscattering/channeling spectrometry, transmission electron microscopy, and soft x-ray absorption spectroscopy. Results show that, contrary to other ion species, implanted C forms nitrilelike carbon-nitride bonds (CN) and suppresses ion-beam-induced material decomposition involving the formation and agglomeration of 5-nm -large N2 gas bubbles.

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JF - Applied Physics Letters

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Effects of carbon on ion-implantation-induced disorder in GaN

Abstract

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