Effects of high temperature annealing on defects and luminescence properties in H implanted ZnO

K. S. Chan; C. Ton-That; L. Vines; S. Choi; M. R. Phillips; B. G. Svensson; C. Jagadish; J. Wong-Leung

doi:10.1088/0022-3727/47/34/342001

Effects of high temperature annealing on defects and luminescence properties in H implanted ZnO

K. S. Chan, C. Ton-That, L. Vines, S. Choi, M. R. Phillips, B. G. Svensson, C. Jagadish, J. Wong-Leung

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Abstract

The evolution of luminescence properties and voids formation with respect to annealing temperature in H implanted ZnO was investigated by depth-resolved cathodoluminescence spectroscopy (DRCLS), transmission electron microscopy and secondary ion mass spectrometry (SIMS). The annealing temperature is found to induce noticeable changes to the shape, size and empty volume density of the cavities. DRCLS results also reveal that the green emission is influenced by different annealing temperatures. In particular, the 600 °C anneal produces a strong quenching of the green emission in the implanted region, while after the 800 °C anneal a significant enhancement near the surface is observed. The annealing at 600 °C also results in an uncommon violet emission at ∼3.1 eV that is not observed after a higher annealing temperature. A clear correlation between the violet emission, vacancies and Li is revealed from comparison between the DRCLS intensities and SIMS data.

Original language	English
Article number	342001
Journal	Journal Physics D: Applied Physics
Volume	47
Issue number	34
DOIs	https://doi.org/10.1088/0022-3727/47/34/342001
Publication status	Published - 30 Aug 2014

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title = "Effects of high temperature annealing on defects and luminescence properties in H implanted ZnO",

abstract = "The evolution of luminescence properties and voids formation with respect to annealing temperature in H implanted ZnO was investigated by depth-resolved cathodoluminescence spectroscopy (DRCLS), transmission electron microscopy and secondary ion mass spectrometry (SIMS). The annealing temperature is found to induce noticeable changes to the shape, size and empty volume density of the cavities. DRCLS results also reveal that the green emission is influenced by different annealing temperatures. In particular, the 600 °C anneal produces a strong quenching of the green emission in the implanted region, while after the 800 °C anneal a significant enhancement near the surface is observed. The annealing at 600 °C also results in an uncommon violet emission at ∼3.1 eV that is not observed after a higher annealing temperature. A clear correlation between the violet emission, vacancies and Li is revealed from comparison between the DRCLS intensities and SIMS data.",

keywords = "IIIV compound semiconductors, annealing, depth-resolved cathodoluminescence spectroscopy, ion implantation, secondary ion mass spectrometry, transmission electron microscopy, zinc oxide",

author = "Chan, {K. S.} and C. Ton-That and L. Vines and S. Choi and Phillips, {M. R.} and Svensson, {B. G.} and C. Jagadish and J. Wong-Leung",

year = "2014",

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doi = "10.1088/0022-3727/47/34/342001",

language = "English",

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T1 - Effects of high temperature annealing on defects and luminescence properties in H implanted ZnO

AU - Chan, K. S.

AU - Ton-That, C.

AU - Vines, L.

AU - Choi, S.

AU - Phillips, M. R.

AU - Svensson, B. G.

AU - Jagadish, C.

AU - Wong-Leung, J.

PY - 2014/8/30

Y1 - 2014/8/30

N2 - The evolution of luminescence properties and voids formation with respect to annealing temperature in H implanted ZnO was investigated by depth-resolved cathodoluminescence spectroscopy (DRCLS), transmission electron microscopy and secondary ion mass spectrometry (SIMS). The annealing temperature is found to induce noticeable changes to the shape, size and empty volume density of the cavities. DRCLS results also reveal that the green emission is influenced by different annealing temperatures. In particular, the 600 °C anneal produces a strong quenching of the green emission in the implanted region, while after the 800 °C anneal a significant enhancement near the surface is observed. The annealing at 600 °C also results in an uncommon violet emission at ∼3.1 eV that is not observed after a higher annealing temperature. A clear correlation between the violet emission, vacancies and Li is revealed from comparison between the DRCLS intensities and SIMS data.

AB - The evolution of luminescence properties and voids formation with respect to annealing temperature in H implanted ZnO was investigated by depth-resolved cathodoluminescence spectroscopy (DRCLS), transmission electron microscopy and secondary ion mass spectrometry (SIMS). The annealing temperature is found to induce noticeable changes to the shape, size and empty volume density of the cavities. DRCLS results also reveal that the green emission is influenced by different annealing temperatures. In particular, the 600 °C anneal produces a strong quenching of the green emission in the implanted region, while after the 800 °C anneal a significant enhancement near the surface is observed. The annealing at 600 °C also results in an uncommon violet emission at ∼3.1 eV that is not observed after a higher annealing temperature. A clear correlation between the violet emission, vacancies and Li is revealed from comparison between the DRCLS intensities and SIMS data.

KW - IIIV compound semiconductors

KW - annealing

KW - depth-resolved cathodoluminescence spectroscopy

KW - ion implantation

KW - secondary ion mass spectrometry

KW - transmission electron microscopy

KW - zinc oxide

UR - http://www.scopus.com/inward/record.url?scp=84905917403&partnerID=8YFLogxK

U2 - 10.1088/0022-3727/47/34/342001

DO - 10.1088/0022-3727/47/34/342001

M3 - Article

SN - 0022-3727

VL - 47

JO - Journal Physics D: Applied Physics

JF - Journal Physics D: Applied Physics

IS - 34

M1 - 342001

ER -

Effects of high temperature annealing on defects and luminescence properties in H implanted ZnO

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