Effects of lnxGa1-xAs matrix layer on in As quantum dot formation and their emission wavelength

Zongyou Yin; Xiaohong Tang; Wei Liu; Daohua Zhang; Anyan Du

doi:10.1063/1.2220477

Effects of ln_xGa_1-xAs matrix layer on in As quantum dot formation and their emission wavelength

Zongyou Yin, Xiaohong Tang^*, Wei Liu, Daohua Zhang, Anyan Du

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Self-assembled InAs quantum dots (QDs) grown on different In _xGa_1-xAs/InP matrixes by metal-organic chemical vapor deposition with fast nucleation rate and atomic layer epitaxy in pure nitrogen ambient have been studied. It has been found that the InAs QD formation efficiency is enhanced when the dots are grown on the strained In _xGa_1-xAs/InP matrix compared with the dots grown on an unstrained In_xGa_1-xAs/InP matrix. By changing the indium composition x of the In_xGa_1-xAs barrier from 0.53 to 0.72, the 77 K photoluminescence (PL) emission wavelength of the InAs QD structures is redshifted by 220-300 nm. The transition energy of the InAs/InGaAs/InP QD structure has been calculated by using the eight-band k·p theory with consideration of the strain effect from QD's upper In_xGa _1-xAs barrier layer. The calculated E1-HH1 transition energies agree with the measured PL emission peaks quite well.

Original language	English
Article number	033109
Journal	Journal of Applied Physics
Volume	100
Issue number	3
DOIs	https://doi.org/10.1063/1.2220477
Publication status	Published - 2006
Externally published	Yes

Access to Document

10.1063/1.2220477

Cite this

@article{f7c27390d2b74f908df0a947e6f8e86b,

title = "Effects of lnxGa1-xAs matrix layer on in As quantum dot formation and their emission wavelength",

abstract = "Self-assembled InAs quantum dots (QDs) grown on different In xGa1-xAs/InP matrixes by metal-organic chemical vapor deposition with fast nucleation rate and atomic layer epitaxy in pure nitrogen ambient have been studied. It has been found that the InAs QD formation efficiency is enhanced when the dots are grown on the strained In xGa1-xAs/InP matrix compared with the dots grown on an unstrained InxGa1-xAs/InP matrix. By changing the indium composition x of the InxGa1-xAs barrier from 0.53 to 0.72, the 77 K photoluminescence (PL) emission wavelength of the InAs QD structures is redshifted by 220-300 nm. The transition energy of the InAs/InGaAs/InP QD structure has been calculated by using the eight-band k·p theory with consideration of the strain effect from QD's upper InxGa 1-xAs barrier layer. The calculated E1-HH1 transition energies agree with the measured PL emission peaks quite well.",

author = "Zongyou Yin and Xiaohong Tang and Wei Liu and Daohua Zhang and Anyan Du",

year = "2006",

doi = "10.1063/1.2220477",

language = "English",

volume = "100",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "3",

}

TY - JOUR

T1 - Effects of lnxGa1-xAs matrix layer on in As quantum dot formation and their emission wavelength

AU - Yin, Zongyou

AU - Tang, Xiaohong

AU - Liu, Wei

AU - Zhang, Daohua

AU - Du, Anyan

PY - 2006

Y1 - 2006

N2 - Self-assembled InAs quantum dots (QDs) grown on different In xGa1-xAs/InP matrixes by metal-organic chemical vapor deposition with fast nucleation rate and atomic layer epitaxy in pure nitrogen ambient have been studied. It has been found that the InAs QD formation efficiency is enhanced when the dots are grown on the strained In xGa1-xAs/InP matrix compared with the dots grown on an unstrained InxGa1-xAs/InP matrix. By changing the indium composition x of the InxGa1-xAs barrier from 0.53 to 0.72, the 77 K photoluminescence (PL) emission wavelength of the InAs QD structures is redshifted by 220-300 nm. The transition energy of the InAs/InGaAs/InP QD structure has been calculated by using the eight-band k·p theory with consideration of the strain effect from QD's upper InxGa 1-xAs barrier layer. The calculated E1-HH1 transition energies agree with the measured PL emission peaks quite well.

AB - Self-assembled InAs quantum dots (QDs) grown on different In xGa1-xAs/InP matrixes by metal-organic chemical vapor deposition with fast nucleation rate and atomic layer epitaxy in pure nitrogen ambient have been studied. It has been found that the InAs QD formation efficiency is enhanced when the dots are grown on the strained In xGa1-xAs/InP matrix compared with the dots grown on an unstrained InxGa1-xAs/InP matrix. By changing the indium composition x of the InxGa1-xAs barrier from 0.53 to 0.72, the 77 K photoluminescence (PL) emission wavelength of the InAs QD structures is redshifted by 220-300 nm. The transition energy of the InAs/InGaAs/InP QD structure has been calculated by using the eight-band k·p theory with consideration of the strain effect from QD's upper InxGa 1-xAs barrier layer. The calculated E1-HH1 transition energies agree with the measured PL emission peaks quite well.

UR - http://www.scopus.com/inward/record.url?scp=33747338952&partnerID=8YFLogxK

U2 - 10.1063/1.2220477

DO - 10.1063/1.2220477

M3 - Article

SN - 0021-8979

VL - 100

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 3

M1 - 033109

ER -

Effects of ln_xGa_1-xAs matrix layer on in As quantum dot formation and their emission wavelength

Abstract

Access to Document

Other files and links

Fingerprint

Cite this