Effects of thermal stress on interdiffusion in InGaAsN/GaAs quantum dots

Q. Gao; H. H. Tan; L. Fu; C. Jagadish

doi:10.1063/1.1760886

Effects of thermal stress on interdiffusion in InGaAsN/GaAs quantum dots

Q. Gao^*, H. H. Tan, L. Fu, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The control of interdiffusion in InGaAsN/GaAs quantum dots by thermal stress was discussed. It was observed that by depositing TiO₂ layers without degrading the pholuminescence properties, the thermal interdiffusion was effectively suppressed. A controlled blueshifting of the band gap was achieved by combining annealing temperature and TiO₂ thickness. It was suggested that the method has significant potential for optoelectronic device integration using selective-area defect engineering.

Original language	English
Pages (from-to)	4950-4952
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	24
DOIs	https://doi.org/10.1063/1.1760886
Publication status	Published - 14 Jun 2004

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title = "Effects of thermal stress on interdiffusion in InGaAsN/GaAs quantum dots",

abstract = "The control of interdiffusion in InGaAsN/GaAs quantum dots by thermal stress was discussed. It was observed that by depositing TiO2 layers without degrading the pholuminescence properties, the thermal interdiffusion was effectively suppressed. A controlled blueshifting of the band gap was achieved by combining annealing temperature and TiO2 thickness. It was suggested that the method has significant potential for optoelectronic device integration using selective-area defect engineering.",

author = "Q. Gao and Tan, \{H. H.\} and L. Fu and C. Jagadish",

year = "2004",

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AU - Gao, Q.

AU - Tan, H. H.

AU - Fu, L.

AU - Jagadish, C.

PY - 2004/6/14

Y1 - 2004/6/14

N2 - The control of interdiffusion in InGaAsN/GaAs quantum dots by thermal stress was discussed. It was observed that by depositing TiO2 layers without degrading the pholuminescence properties, the thermal interdiffusion was effectively suppressed. A controlled blueshifting of the band gap was achieved by combining annealing temperature and TiO2 thickness. It was suggested that the method has significant potential for optoelectronic device integration using selective-area defect engineering.

AB - The control of interdiffusion in InGaAsN/GaAs quantum dots by thermal stress was discussed. It was observed that by depositing TiO2 layers without degrading the pholuminescence properties, the thermal interdiffusion was effectively suppressed. A controlled blueshifting of the band gap was achieved by combining annealing temperature and TiO2 thickness. It was suggested that the method has significant potential for optoelectronic device integration using selective-area defect engineering.

UR - https://www.scopus.com/pages/publications/3042730802

U2 - 10.1063/1.1760886

DO - 10.1063/1.1760886

M3 - Article

SN - 0003-6951

VL - 84

SP - 4950

EP - 4952

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

ER -

Effects of thermal stress on interdiffusion in InGaAsN/GaAs quantum dots

Abstract

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