Effects of well thickness on the spectral properties of In0.5 Ga0.5 AsGaAs Al0.2 Ga0.8 As quantum dots-in-a-well infrared photodetectors

G. Jolley*, L. Fu, H. H. Tan, C. Jagadish

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    30 Citations (Scopus)

    Abstract

    We report on the effects of the quantum well (QW) thickness on the spectral response and other characteristics of In0.5 Ga0.5 AsGaAs Al0.2 Ga0.8 As quantum dots-in-a-well infrared photodetectors grown by low-pressure metal-organic chemical vapor deposition. The main device properties are observed to have a strong dependence on the QW parameters.

    Original languageEnglish
    Article number193507
    JournalApplied Physics Letters
    Volume92
    Issue number19
    DOIs
    Publication statusPublished - 2008

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