Abstract
We report on the effects of the quantum well (QW) thickness on the spectral response and other characteristics of In0.5 Ga0.5 AsGaAs Al0.2 Ga0.8 As quantum dots-in-a-well infrared photodetectors grown by low-pressure metal-organic chemical vapor deposition. The main device properties are observed to have a strong dependence on the QW parameters.
Original language | English |
---|---|
Article number | 193507 |
Journal | Applied Physics Letters |
Volume | 92 |
Issue number | 19 |
DOIs | |
Publication status | Published - 2008 |