Effects of well thickness on the spectral properties of In0.5 Ga0.5 AsGaAs Al0.2 Ga0.8 As quantum dots-in-a-well infrared photodetectors

G. Jolley; L. Fu; H. H. Tan; C. Jagadish

doi:10.1063/1.2927487

Effects of well thickness on the spectral properties of In_0.5 Ga_0.5 AsGaAs Al_0.2 Ga_0.8 As quantum dots-in-a-well infrared photodetectors

G. Jolley^*
, L. Fu
, H. H. Tan
, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

We report on the effects of the quantum well (QW) thickness on the spectral response and other characteristics of In0.5 Ga0.5 AsGaAs Al0.2 Ga0.8 As quantum dots-in-a-well infrared photodetectors grown by low-pressure metal-organic chemical vapor deposition. The main device properties are observed to have a strong dependence on the QW parameters.

Original language	English
Article number	193507
Journal	Applied Physics Letters
Volume	92
Issue number	19
DOIs	https://doi.org/10.1063/1.2927487
Publication status	Published - 2008

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title = "Effects of well thickness on the spectral properties of In0.5 Ga0.5 AsGaAs Al0.2 Ga0.8 As quantum dots-in-a-well infrared photodetectors",

abstract = "We report on the effects of the quantum well (QW) thickness on the spectral response and other characteristics of In0.5 Ga0.5 AsGaAs Al0.2 Ga0.8 As quantum dots-in-a-well infrared photodetectors grown by low-pressure metal-organic chemical vapor deposition. The main device properties are observed to have a strong dependence on the QW parameters.",

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AU - Jolley, G.

AU - Fu, L.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2008

Y1 - 2008

N2 - We report on the effects of the quantum well (QW) thickness on the spectral response and other characteristics of In0.5 Ga0.5 AsGaAs Al0.2 Ga0.8 As quantum dots-in-a-well infrared photodetectors grown by low-pressure metal-organic chemical vapor deposition. The main device properties are observed to have a strong dependence on the QW parameters.

AB - We report on the effects of the quantum well (QW) thickness on the spectral response and other characteristics of In0.5 Ga0.5 AsGaAs Al0.2 Ga0.8 As quantum dots-in-a-well infrared photodetectors grown by low-pressure metal-organic chemical vapor deposition. The main device properties are observed to have a strong dependence on the QW parameters.

UR - https://www.scopus.com/pages/publications/44049090264

U2 - 10.1063/1.2927487

DO - 10.1063/1.2927487

M3 - Article

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

M1 - 193507

ER -

Effects of well thickness on the spectral properties of In_0.5 Ga_0.5 AsGaAs Al_0.2 Ga_0.8 As quantum dots-in-a-well infrared photodetectors

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