Efficiency of dislocations and cavities for gettering of Cu and Fe in silicon

B. Stritzker*, M. Petravic, J. Wong-Leung, J. S. Williams

*Corresponding author for this work

    Research output: Contribution to journalConference articlepeer-review

    2 Citations (Scopus)

    Abstract

    Dislocations (of interstitial character) as well as cavities are known for their ability to getter impurities within Si. In order to determine the relative gettering strength we produced both dislocations and cavities at different depths within (100) Si. This was obtained by implantation and subsequent annealing of 3 × 1016 (40 keV H)/cm2 and 1 × 1016 (140 keV Si)/cm2 resulting in cavities and dislocations at depths of 400 nm and 200 nm, respectively. Fe or Cu was then implanted with a dose of 5 × 1013 atoms/cm2 and an energy of 35 keV. By selective implantation of different areas, all possible combinations of impurities, dislocations and cavities were obtained within one Si-sample. The results show, clearly, that Cu-impurities are gettered totally by cavities (or open-volume defects), even when dislocations are also present. In contrast, Fe-impurities, which are released from traps near the surface during annealing, are gettered by both interstitial-based dislocations and open-volume defects. Secondary ion mass spectrometry and transmission electron microscopy analyses reveal defect-Fe-impurity interactions at the different trap sites.

    Original languageEnglish
    Pages (from-to)154-158
    Number of pages5
    JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
    Volume175-177
    DOIs
    Publication statusPublished - Apr 2001
    Event12th International Conference on Ion Beam Modification of Materials - Rio Grande do Sul, Brazil
    Duration: 3 Sept 20008 Sept 2000

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