Abstract
Technological restrictions on the screen-printed rear-contact feature size on the order of 100 μm are among the limiting factors of the efficiency of p-type passivated emitter rear-contact (PERC) solar cells. Simultaneous contact opening and doping using localized laser processing can overcome these design limitations. We use 3-D numerical device simulations to show that an efficiency gain of 0.3%abs compared with a screen-printed baseline cell, is possible if laser-formed point contacts of 5 μm in size with a contact recombination parameter of 5000 fA·cm-2 and a contact resistance of 10-4 Ω·cm2 are used. We experimentally demonstrate the implementation of simultaneous rear-surface contact opening and doping on large-area 156 × 156 mm2-sized PERC solar cells using ultraviolet (UV) and green laser systems. We achieve efficiencies of up to 19.9% for this process with a 10-nm atomic layer deposited Al2O3/80-nm plasma-enhanced chemical vapor deposited SiNx rear-surface dielectric stack.
Original language | English |
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Article number | 7435231 |
Pages (from-to) | 624-631 |
Number of pages | 8 |
Journal | IEEE Journal of Photovoltaics |
Volume | 6 |
Issue number | 3 |
DOIs | |
Publication status | Published - May 2016 |