Efficient gettering of low concentrations of copper contamination to hydrogen induced nanocavities in silicon

A. Kinomura; J. S. Williams; J. Wong-Leung; M. Petravic; Y. Nakano; Y. Hayashi

doi:10.1063/1.122538

Efficient gettering of low concentrations of copper contamination to hydrogen induced nanocavities in silicon

A. Kinomura^*, J. S. Williams, J. Wong-Leung, M. Petravic, Y. Nakano, Y. Hayashi

^*Corresponding author for this work

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20 Citations (Scopus)

Abstract

The efficient gettering to hydrogen-induced cavities in Si has been successfully demonstrated for low concentrations of Cu, unintentionally introduced during wafer processing. Secondary ion mass spectrometry showed up to 5×10¹²cm^-2Cu could be introduced into a silicon wafer and trapped at cavities. Neutron activation analysis indicated that, in samples with cavities, the Cu within the bulk was below the detection limit (around 4×10¹¹cm^-2), while Cu was detected throughout the bulk of samples without cavities.

Original language	English
Pages (from-to)	2639-2641
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	18
DOIs	https://doi.org/10.1063/1.122538
Publication status	Published - 1998

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10.1063/1.122538

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abstract = "The efficient gettering to hydrogen-induced cavities in Si has been successfully demonstrated for low concentrations of Cu, unintentionally introduced during wafer processing. Secondary ion mass spectrometry showed up to 5×1012cm-2Cu could be introduced into a silicon wafer and trapped at cavities. Neutron activation analysis indicated that, in samples with cavities, the Cu within the bulk was below the detection limit (around 4×1011cm-2), while Cu was detected throughout the bulk of samples without cavities.",

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AU - Kinomura, A.

AU - Williams, J. S.

AU - Wong-Leung, J.

AU - Petravic, M.

AU - Nakano, Y.

AU - Hayashi, Y.

PY - 1998

Y1 - 1998

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AB - The efficient gettering to hydrogen-induced cavities in Si has been successfully demonstrated for low concentrations of Cu, unintentionally introduced during wafer processing. Secondary ion mass spectrometry showed up to 5×1012cm-2Cu could be introduced into a silicon wafer and trapped at cavities. Neutron activation analysis indicated that, in samples with cavities, the Cu within the bulk was below the detection limit (around 4×1011cm-2), while Cu was detected throughout the bulk of samples without cavities.

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Efficient gettering of low concentrations of copper contamination to hydrogen induced nanocavities in silicon

Abstract

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