Efficient Indium-Doped TiOx Electron Transport Layers for High-Performance Perovskite Solar Cells and Perovskite-Silicon Tandems

Jun Peng*, The Duong, Xianzhong Zhou, Heping Shen, Yiliang Wu, Hemant Kumar Mulmudi, Yimao Wan, Dingyong Zhong, Juntao Li, Takuya Tsuzuki, Klaus J. Weber, Kylie R. Catchpole, Thomas P. White

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    191 Citations (Scopus)

    Abstract

    In addition to a good perovskite light absorbing layer, the hole and electron transport layers play a crucial role in achieving high-efficiency perovskite solar cells. Here, a simple, one-step, solution-based method is introduced for fabricating high quality indium-doped titanium oxide electron transport layers. It is shown that indium-doping improves both the conductivity of the transport layer and the band alignment at the ETL/perovskite interface compared to pure TiO2, boosting the fill-factor and voltage of perovskite cells. Using the optimized transport layers, a high steady-state efficiency of 17.9% for CH3NH3PbI3-based cells and 19.3% for Cs0.05(MA0.17FA0.83)0.95Pb(I0.83Br0.17)3-based cells is demonstrated, corresponding to absolute efficiency gains of 4.4% and 1.2% respectively compared to TiO2-based control cells. In addition, a steady-state efficiency of 16.6% for a semi-transparent cell is reported and it is used to achieve a four-terminal perovskite-silicon tandem cell with a steady-state efficiency of 24.5%.

    Original languageEnglish
    Article number1601768
    JournalAdvanced Energy Materials
    Volume7
    Issue number4
    DOIs
    Publication statusPublished - 22 Feb 2017

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