Efficient point defect engineered Si light-emitting diode at 1.218 μm

Jiming Bao; Malek Tabbal; Taegon Kim; Supakit Charnvanichborikarn; James S. Williams; Michael J. Aziz; Federico Capasso

doi:10.1109/QELS.2007.4431330

Efficient point defect engineered Si light-emitting diode at 1.218 μm

Jiming Bao^*, Malek Tabbal, Taegon Kim, Supakit Charnvanichborikarn, James S. Williams, Michael J. Aziz, Federico Capasso

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We have demonstrated a Si LED with an internal quantum efficiency ∼ 10 % using a novel approach to enhance light emission based on point defect engineering, which uses state-of-the art technology.

Original language	English
Title of host publication	2007 Quantum Electronics and Laser Science Conference, QELS
DOIs	https://doi.org/10.1109/QELS.2007.4431330
Publication status	Published - 2007
Event	2007 Quantum Electronics and Laser Science Conference, QELS - Baltimore, MD, United States Duration: 6 May 2007 → 11 May 2007

Publication series

Name	Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series

Conference

Conference	2007 Quantum Electronics and Laser Science Conference, QELS
Country/Territory	United States
City	Baltimore, MD
Period	6/05/07 → 11/05/07

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10.1109/QELS.2007.4431330

Cite this

Bao, J., Tabbal, M., Kim, T., Charnvanichborikarn, S., Williams, J. S., Aziz, M. J., & Capasso, F. (2007). Efficient point defect engineered Si light-emitting diode at 1.218 μm. In 2007 Quantum Electronics and Laser Science Conference, QELS Article 4431330 (Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series). https://doi.org/10.1109/QELS.2007.4431330

@inproceedings{88e92d763fde4f42beb35174e07dba8e,

title = "Efficient point defect engineered Si light-emitting diode at 1.218 μm",

abstract = "We have demonstrated a Si LED with an internal quantum efficiency ∼ 10 % using a novel approach to enhance light emission based on point defect engineering, which uses state-of-the art technology.",

author = "Jiming Bao and Malek Tabbal and Taegon Kim and Supakit Charnvanichborikarn and Williams, {James S.} and Aziz, {Michael J.} and Federico Capasso",

year = "2007",

doi = "10.1109/QELS.2007.4431330",

language = "English",

isbn = "1557528349",

series = "Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series",

booktitle = "2007 Quantum Electronics and Laser Science Conference, QELS",

note = "2007 Quantum Electronics and Laser Science Conference, QELS ; Conference date: 06-05-2007 Through 11-05-2007",

}

Bao, J, Tabbal, M, Kim, T, Charnvanichborikarn, S, Williams, JS, Aziz, MJ & Capasso, F 2007, Efficient point defect engineered Si light-emitting diode at 1.218 μm. in 2007 Quantum Electronics and Laser Science Conference, QELS., 4431330, Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series, 2007 Quantum Electronics and Laser Science Conference, QELS, Baltimore, MD, United States, 6/05/07. https://doi.org/10.1109/QELS.2007.4431330

Efficient point defect engineered Si light-emitting diode at 1.218 μm. / Bao, Jiming; Tabbal, Malek; Kim, Taegon et al.
2007 Quantum Electronics and Laser Science Conference, QELS. 2007. 4431330 (Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Efficient point defect engineered Si light-emitting diode at 1.218 μm

AU - Bao, Jiming

AU - Tabbal, Malek

AU - Kim, Taegon

AU - Charnvanichborikarn, Supakit

AU - Williams, James S.

AU - Aziz, Michael J.

AU - Capasso, Federico

PY - 2007

Y1 - 2007

N2 - We have demonstrated a Si LED with an internal quantum efficiency ∼ 10 % using a novel approach to enhance light emission based on point defect engineering, which uses state-of-the art technology.

AB - We have demonstrated a Si LED with an internal quantum efficiency ∼ 10 % using a novel approach to enhance light emission based on point defect engineering, which uses state-of-the art technology.

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U2 - 10.1109/QELS.2007.4431330

DO - 10.1109/QELS.2007.4431330

M3 - Conference contribution

SN - 1557528349

SN - 9781557528346

T3 - Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series

BT - 2007 Quantum Electronics and Laser Science Conference, QELS

T2 - 2007 Quantum Electronics and Laser Science Conference, QELS

Y2 - 6 May 2007 through 11 May 2007

ER -

Efficient point defect engineered Si light-emitting diode at 1.218 μm

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