@inproceedings{8b035d8541d34cbdb3d02fefcdc02a64,
title = "Electrical characterization of semiconductor nanowires by scanning tunneling microscopy",
abstract = "In order to understand the structural and electronic properties of semiconductor nanowires, scanning tunneling microscopy is an appealing technique that can supplement transmission electron microscopies and conventional electrical characterization techniques. It is able to probe the surface of semiconductor materials at the atomic scale and can be successfully applied to study the nanofaceting morphology, the atomic structure and the surface composition of oxide-free nanowire sidewalls. Based on the advantages provided by the unique geometry of semiconductor nanowires for a low-cost and efficient integration into nanoscale devices, additional characterization schemes performed with multiple probe scanning tunneling microscopy are also presented to get a deeper understanding of their transport properties.",
keywords = "Semiconductor nanowires, electrical characterization, scanning tunneling microscopy, surfaces and interfaces",
author = "Corentin Durand and Pierre Capoid and M. Berthe and Tao Xu and Nys, {Jean Philippe} and Renaud Leturcq and Ph Caroff and Bruno Grandidier",
year = "2014",
doi = "10.1117/12.2042767",
language = "English",
isbn = "9780819499097",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
booktitle = "Quantum Dots and Nanostructures",
address = "United States",
note = "Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling XI ; Conference date: 03-02-2014 Through 05-02-2014",
}