Electrical Isolation of AlxGa1-xAs by Ion Irradiation

T V Lippen; H Boudinov; Hoe Tan; Chennupati Jagadish

doi:10.1063/1.1427422

Electrical Isolation of Al_xGa_1-xAs by Ion Irradiation

T V Lippen, H Boudinov, Hoe Tan, Chennupati Jagadish

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

The evolution of sheet resistance Rs of n-type and p-type conductive AlxGa12xAs layers ~x50.3, 0.6, and 1.0! during proton irradiation was investigated. The threshold dose Dth to convert a conductive layer to a highly resistive one is slightly different for n- and p-type samples with similar
initial free carrier concentration and does not depend on the Al content. The thermal stability of the isolation, i.e., the temperature range for which the Rs is maintained at '109 V/sq, was found to be dependent on the ratio of the carrier trap concentration to the original carrier concentration. The
thermal stability of isolated p-type samples is limited to temperatures lower than 450 °C. The temperature of '600 °C is the upper limit for the n-type samples thermal stability. © 2002
American Institute of Physics.

Original language	English
Pages (from-to)	264-266
Number of pages	3
Journal	Applied Physics Letters
Volume	80
DOIs	https://doi.org/10.1063/1.1427422
Publication status	Published - 2002

Access to Document

10.1063/1.1427422

Cite this

@article{69e2a317f8c94a1f9f0b5a3f7d6f340a,

title = "Electrical Isolation of AlxGa1-xAs by Ion Irradiation",

abstract = "The evolution of sheet resistance Rs of n-type and p-type conductive AlxGa12xAs layers ~x50.3, 0.6, and 1.0! during proton irradiation was investigated. The threshold dose Dth to convert a conductive layer to a highly resistive one is slightly different for n- and p-type samples with similarinitial free carrier concentration and does not depend on the Al content. The thermal stability of the isolation, i.e., the temperature range for which the Rs is maintained at '109 V/sq, was found to be dependent on the ratio of the carrier trap concentration to the original carrier concentration. Thethermal stability of isolated p-type samples is limited to temperatures lower than 450 °C. The temperature of '600 °C is the upper limit for the n-type samples thermal stability. {\textcopyright} 2002American Institute of Physics. ",

author = "Lippen, {T V} and H Boudinov and Hoe Tan and Chennupati Jagadish",

year = "2002",

doi = "10.1063/1.1427422",

language = "English",

volume = "80",

pages = "264--266",

journal = "Applied Physics Letters",

publisher = "American Institute of Physics (AIP)",

}

TY - JOUR

T1 - Electrical Isolation of AlxGa1-xAs by Ion Irradiation

AU - Lippen, T V

AU - Boudinov, H

AU - Tan, Hoe

AU - Jagadish, Chennupati

PY - 2002

Y1 - 2002

N2 - The evolution of sheet resistance Rs of n-type and p-type conductive AlxGa12xAs layers ~x50.3, 0.6, and 1.0! during proton irradiation was investigated. The threshold dose Dth to convert a conductive layer to a highly resistive one is slightly different for n- and p-type samples with similarinitial free carrier concentration and does not depend on the Al content. The thermal stability of the isolation, i.e., the temperature range for which the Rs is maintained at '109 V/sq, was found to be dependent on the ratio of the carrier trap concentration to the original carrier concentration. Thethermal stability of isolated p-type samples is limited to temperatures lower than 450 °C. The temperature of '600 °C is the upper limit for the n-type samples thermal stability. © 2002American Institute of Physics.

AB - The evolution of sheet resistance Rs of n-type and p-type conductive AlxGa12xAs layers ~x50.3, 0.6, and 1.0! during proton irradiation was investigated. The threshold dose Dth to convert a conductive layer to a highly resistive one is slightly different for n- and p-type samples with similarinitial free carrier concentration and does not depend on the Al content. The thermal stability of the isolation, i.e., the temperature range for which the Rs is maintained at '109 V/sq, was found to be dependent on the ratio of the carrier trap concentration to the original carrier concentration. Thethermal stability of isolated p-type samples is limited to temperatures lower than 450 °C. The temperature of '600 °C is the upper limit for the n-type samples thermal stability. © 2002American Institute of Physics.

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-79956025630&origin=inward

U2 - 10.1063/1.1427422

DO - 10.1063/1.1427422

M3 - Article

VL - 80

SP - 264

EP - 266

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Electrical Isolation of AlxGa1-xAs by Ion Irradiation

Abstract

Access to Document

Fingerprint

Cite this

Electrical Isolation of Al_xGa_1-xAs by Ion Irradiation