Electrical isolation of n- and p-In0.53Ga0.47As epilayers using ion irradiation

C. Carmody; H. H. Tan; C. Jagadish

doi:10.1063/1.1619567

Electrical isolation of n- and p-In_0.53Ga_0.47As epilayers using ion irradiation

C. Carmody^*, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

Single implant technique into n- and p-InGaAs epilayers which are grown on InP substrates was discussed. Electrical isolation was studied using ion irradiation. Room temperature sheet resistance of the epilayers was also measured in the absence of light. The results show that higher resistivity is achieved by implantation into p-InGaAs as compared to n-InGaAs epilayers on InP.

Original language	English
Pages (from-to)	6616-6620
Number of pages	5
Journal	Journal of Applied Physics
Volume	94
Issue number	10
DOIs	https://doi.org/10.1063/1.1619567
Publication status	Published - 15 Nov 2003

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title = "Electrical isolation of n- and p-In0.53Ga0.47As epilayers using ion irradiation",

abstract = "Single implant technique into n- and p-InGaAs epilayers which are grown on InP substrates was discussed. Electrical isolation was studied using ion irradiation. Room temperature sheet resistance of the epilayers was also measured in the absence of light. The results show that higher resistivity is achieved by implantation into p-InGaAs as compared to n-InGaAs epilayers on InP.",

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AU - Carmody, C.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2003/11/15

Y1 - 2003/11/15

N2 - Single implant technique into n- and p-InGaAs epilayers which are grown on InP substrates was discussed. Electrical isolation was studied using ion irradiation. Room temperature sheet resistance of the epilayers was also measured in the absence of light. The results show that higher resistivity is achieved by implantation into p-InGaAs as compared to n-InGaAs epilayers on InP.

AB - Single implant technique into n- and p-InGaAs epilayers which are grown on InP substrates was discussed. Electrical isolation was studied using ion irradiation. Room temperature sheet resistance of the epilayers was also measured in the absence of light. The results show that higher resistivity is achieved by implantation into p-InGaAs as compared to n-InGaAs epilayers on InP.

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U2 - 10.1063/1.1619567

DO - 10.1063/1.1619567

M3 - Article

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EP - 6620

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

ER -

Electrical isolation of n- and p-In_0.53Ga_0.47As epilayers using ion irradiation

Abstract

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