Electrical isolation of n-type and p-type InP layers by proton bombardment

H. Boudinov; H. H. Tan; C. Jagadish

doi:10.1063/1.1365063

Electrical isolation of n-type and p-type InP layers by proton bombardment

H. Boudinov^*, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

The evolution of the sheet resistance (R_s) of n-type and p-type conductive InP layers during proton irradiation and the stability of the formed isolation during postirradiation annealing were investigated. It was found that the threshold dose (D_th) to convert the conductive layer to a highly resistive one is different for n- and p-type samples with similar initial free carrier concentrations. From our results, one infers that the antisite defects and/or related defect complexes formed by the replacement collisions are the carrier trapping centers, where In_P is responsible for electron trapping and P_In for the hole trapping. A time dependence of the R_S was observed after each irradiation step to doses of ≅ D_th and higher. This time variation is related to metastable processes involving free carriers. The thermal stability of the isolation of n-type samples is limited to temperatures lower than 200°C, irrespectively of the irradiated dose. For p-type samples the thermal stability of electrical isolation is extended to 450-500°C.

Original language	English
Pages (from-to)	5343-5347
Number of pages	5
Journal	Journal of Applied Physics
Volume	89
Issue number	10
DOIs	https://doi.org/10.1063/1.1365063
Publication status	Published - 15 May 2001

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title = "Electrical isolation of n-type and p-type InP layers by proton bombardment",

abstract = "The evolution of the sheet resistance (Rs) of n-type and p-type conductive InP layers during proton irradiation and the stability of the formed isolation during postirradiation annealing were investigated. It was found that the threshold dose (Dth) to convert the conductive layer to a highly resistive one is different for n- and p-type samples with similar initial free carrier concentrations. From our results, one infers that the antisite defects and/or related defect complexes formed by the replacement collisions are the carrier trapping centers, where InP is responsible for electron trapping and PIn for the hole trapping. A time dependence of the RS was observed after each irradiation step to doses of ≅ Dth and higher. This time variation is related to metastable processes involving free carriers. The thermal stability of the isolation of n-type samples is limited to temperatures lower than 200°C, irrespectively of the irradiated dose. For p-type samples the thermal stability of electrical isolation is extended to 450-500°C.",

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AU - Boudinov, H.

AU - Tan, H. H.

AU - Jagadish, C.

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N2 - The evolution of the sheet resistance (Rs) of n-type and p-type conductive InP layers during proton irradiation and the stability of the formed isolation during postirradiation annealing were investigated. It was found that the threshold dose (Dth) to convert the conductive layer to a highly resistive one is different for n- and p-type samples with similar initial free carrier concentrations. From our results, one infers that the antisite defects and/or related defect complexes formed by the replacement collisions are the carrier trapping centers, where InP is responsible for electron trapping and PIn for the hole trapping. A time dependence of the RS was observed after each irradiation step to doses of ≅ Dth and higher. This time variation is related to metastable processes involving free carriers. The thermal stability of the isolation of n-type samples is limited to temperatures lower than 200°C, irrespectively of the irradiated dose. For p-type samples the thermal stability of electrical isolation is extended to 450-500°C.

AB - The evolution of the sheet resistance (Rs) of n-type and p-type conductive InP layers during proton irradiation and the stability of the formed isolation during postirradiation annealing were investigated. It was found that the threshold dose (Dth) to convert the conductive layer to a highly resistive one is different for n- and p-type samples with similar initial free carrier concentrations. From our results, one infers that the antisite defects and/or related defect complexes formed by the replacement collisions are the carrier trapping centers, where InP is responsible for electron trapping and PIn for the hole trapping. A time dependence of the RS was observed after each irradiation step to doses of ≅ Dth and higher. This time variation is related to metastable processes involving free carriers. The thermal stability of the isolation of n-type samples is limited to temperatures lower than 200°C, irrespectively of the irradiated dose. For p-type samples the thermal stability of electrical isolation is extended to 450-500°C.

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Electrical isolation of n-type and p-type InP layers by proton bombardment

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