Electrical isolation of n-type InP by ion bombardment: Dose dependence and thermal stability

H. Boudinov; J. P. De Souza; C. Jagadish

doi:10.1016/S0168-583X(00)00529-2

Electrical isolation of n-type InP by ion bombardment: Dose dependence and thermal stability

H. Boudinov^*, J. P. De Souza, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

9 Citations (Scopus)

Abstract

The increasing of the sheet resistance (R_s) of n-type conductive InP layers during proton irradiation and the stability of the formed isolation during post-irradiation annealing were investigated. It was found that the threshold dose (D_th) to convert the conductive layer to a highly resistive one is directly proportional to the original sheet electron concentration (n_s) and inversely proportional to the estimated concentration of In atoms substituting P atoms in the P sublattice, caused by replacement collisions. From the experimental data, one infer that the antisite defects and/or their related defect complexes formed by the replacement collisions are the carrier trapping centers. A time dependence of the R_s was observed after each irradiation step to doses of ≅D_th and higher. The thermal stability of the isolation is limited to temperatures lower than 200°C, irrespective of the irradiated dose and of n_s.

Original language	English
Pages (from-to)	235-240
Number of pages	6
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	175-177
DOIs	https://doi.org/10.1016/S0168-583X(00)00529-2
Publication status	Published - Apr 2001
Event	12th International Conference on Ion Beam Modification of Materials - Rio Grande do Sul, Brazil Duration: 3 Sept 2000 → 8 Sept 2000

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title = "Electrical isolation of n-type InP by ion bombardment: Dose dependence and thermal stability",

abstract = "The increasing of the sheet resistance (Rs) of n-type conductive InP layers during proton irradiation and the stability of the formed isolation during post-irradiation annealing were investigated. It was found that the threshold dose (Dth) to convert the conductive layer to a highly resistive one is directly proportional to the original sheet electron concentration (ns) and inversely proportional to the estimated concentration of In atoms substituting P atoms in the P sublattice, caused by replacement collisions. From the experimental data, one infer that the antisite defects and/or their related defect complexes formed by the replacement collisions are the carrier trapping centers. A time dependence of the Rs was observed after each irradiation step to doses of ≅Dth and higher. The thermal stability of the isolation is limited to temperatures lower than 200°C, irrespective of the irradiated dose and of ns.",

keywords = "InP, Ion bombardment, Isolation, Sheet resistance, Thermal stability",

author = "H. Boudinov and {De Souza}, {J. P.} and C. Jagadish",

year = "2001",

month = apr,

doi = "10.1016/S0168-583X(00)00529-2",

language = "English",

volume = "175-177",

pages = "235--240",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier B.V.",

note = "12th International Conference on Ion Beam Modification of Materials ; Conference date: 03-09-2000 Through 08-09-2000",

}

TY - JOUR

T1 - Electrical isolation of n-type InP by ion bombardment

T2 - 12th International Conference on Ion Beam Modification of Materials

AU - Boudinov, H.

AU - De Souza, J. P.

AU - Jagadish, C.

PY - 2001/4

Y1 - 2001/4

N2 - The increasing of the sheet resistance (Rs) of n-type conductive InP layers during proton irradiation and the stability of the formed isolation during post-irradiation annealing were investigated. It was found that the threshold dose (Dth) to convert the conductive layer to a highly resistive one is directly proportional to the original sheet electron concentration (ns) and inversely proportional to the estimated concentration of In atoms substituting P atoms in the P sublattice, caused by replacement collisions. From the experimental data, one infer that the antisite defects and/or their related defect complexes formed by the replacement collisions are the carrier trapping centers. A time dependence of the Rs was observed after each irradiation step to doses of ≅Dth and higher. The thermal stability of the isolation is limited to temperatures lower than 200°C, irrespective of the irradiated dose and of ns.

AB - The increasing of the sheet resistance (Rs) of n-type conductive InP layers during proton irradiation and the stability of the formed isolation during post-irradiation annealing were investigated. It was found that the threshold dose (Dth) to convert the conductive layer to a highly resistive one is directly proportional to the original sheet electron concentration (ns) and inversely proportional to the estimated concentration of In atoms substituting P atoms in the P sublattice, caused by replacement collisions. From the experimental data, one infer that the antisite defects and/or their related defect complexes formed by the replacement collisions are the carrier trapping centers. A time dependence of the Rs was observed after each irradiation step to doses of ≅Dth and higher. The thermal stability of the isolation is limited to temperatures lower than 200°C, irrespective of the irradiated dose and of ns.

KW - InP

KW - Ion bombardment

KW - Isolation

KW - Sheet resistance

KW - Thermal stability

UR - http://www.scopus.com/inward/record.url?scp=17044455388&partnerID=8YFLogxK

U2 - 10.1016/S0168-583X(00)00529-2

DO - 10.1016/S0168-583X(00)00529-2

M3 - Conference article

SN - 0168-583X

VL - 175-177

SP - 235

EP - 240

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Y2 - 3 September 2000 through 8 September 2000

ER -

Electrical isolation of n-type InP by ion bombardment: Dose dependence and thermal stability

Abstract

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