Electrical properties of gesi surface- and buriedchannel p-MOSFET's fabricated by Ge implantation

Hong Jiang; Robert G. Elliman

doi:10.1109/16.477598

Electrical properties of gesi surface- and buriedchannel p-MOSFET's fabricated by Ge implantation

Hong Jiang^*, Robert G. Elliman

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

-The electrical properties of surface- and buriedchannel p-MOSFET's containing strained GeSi heterostructures synthesized by high-dose Ge implantation and solid phase epitaxial growth have been investigated. Compared with Si control devices on the same chips, GeSi transistors exhibited improved performance: the channel hole mobility and linear transconductance was up to 18% higher for surface-channel GeSi transistors, and up to 12% higher for buried-channel GeSi p-MOSFET's, than for equivalent Si devices. Ion-beam synthesis of GeSi strained layers therefore offers an attractive means for realising improved device performance in conventional Si device structures.

Original language	English
Pages (from-to)	97-103
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	43
Issue number	1
DOIs	https://doi.org/10.1109/16.477598
Publication status	Published - 1996

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title = "Electrical properties of gesi surface- and buriedchannel p-MOSFET's fabricated by Ge implantation",

abstract = "-The electrical properties of surface- and buriedchannel p-MOSFET's containing strained GeSi heterostructures synthesized by high-dose Ge implantation and solid phase epitaxial growth have been investigated. Compared with Si control devices on the same chips, GeSi transistors exhibited improved performance: the channel hole mobility and linear transconductance was up to 18\% higher for surface-channel GeSi transistors, and up to 12\% higher for buried-channel GeSi p-MOSFET's, than for equivalent Si devices. Ion-beam synthesis of GeSi strained layers therefore offers an attractive means for realising improved device performance in conventional Si device structures.",

author = "Hong Jiang and Elliman, \{Robert G.\}",

year = "1996",

doi = "10.1109/16.477598",

language = "English",

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journal = "IEEE Transactions on Electron Devices",

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T1 - Electrical properties of gesi surface- and buriedchannel p-MOSFET's fabricated by Ge implantation

AU - Jiang, Hong

AU - Elliman, Robert G.

PY - 1996

Y1 - 1996

N2 - -The electrical properties of surface- and buriedchannel p-MOSFET's containing strained GeSi heterostructures synthesized by high-dose Ge implantation and solid phase epitaxial growth have been investigated. Compared with Si control devices on the same chips, GeSi transistors exhibited improved performance: the channel hole mobility and linear transconductance was up to 18% higher for surface-channel GeSi transistors, and up to 12% higher for buried-channel GeSi p-MOSFET's, than for equivalent Si devices. Ion-beam synthesis of GeSi strained layers therefore offers an attractive means for realising improved device performance in conventional Si device structures.

AB - -The electrical properties of surface- and buriedchannel p-MOSFET's containing strained GeSi heterostructures synthesized by high-dose Ge implantation and solid phase epitaxial growth have been investigated. Compared with Si control devices on the same chips, GeSi transistors exhibited improved performance: the channel hole mobility and linear transconductance was up to 18% higher for surface-channel GeSi transistors, and up to 12% higher for buried-channel GeSi p-MOSFET's, than for equivalent Si devices. Ion-beam synthesis of GeSi strained layers therefore offers an attractive means for realising improved device performance in conventional Si device structures.

UR - https://www.scopus.com/pages/publications/0029733931

U2 - 10.1109/16.477598

DO - 10.1109/16.477598

M3 - Article

AN - SCOPUS:0029733931

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VL - 43

SP - 97

EP - 103

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 1

ER -

Electrical properties of gesi surface- and buriedchannel p-MOSFET's fabricated by Ge implantation

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