TY - GEN
T1 - Electrical properties of Si-XII and Si-III formed by nanoindentation
AU - Wang, Y.
AU - Ruffell, S.
AU - Sears, K.
AU - Knights, A. P.
AU - Bradby, J. E.
AU - Williams, J. S.
PY - 2010
Y1 - 2010
N2 - Conventional silicon devices and integrated circuits are fabricated in the diamond cubic phase of silicon, so-called Si-I. Other phases of silicon can be formed under pressure applied by indentation and these phases are metastable at room-temperature and pressure. As we demonstrate, such phases behave entirely differently to normal diamond-cubic silicon (Si-I) having different electrical properties. Two such phases, Si-III (BC8) and Si-XII (R8), can be formed by indentation but little is known about their electrical properties. Theoretical studies predict Si-III to be a semimetal [1] and Si-XII to be a narrow band gap semiconductor [2]. We report the first electrical measurements on these phases, which we have formed by nanoindentation. We demonstrate that Si-XII is a semiconductor that can be electrically doped with boron and phosphorus at room temperature. We also demonstrate early devices formed by nanoindentation at room temperature.
AB - Conventional silicon devices and integrated circuits are fabricated in the diamond cubic phase of silicon, so-called Si-I. Other phases of silicon can be formed under pressure applied by indentation and these phases are metastable at room-temperature and pressure. As we demonstrate, such phases behave entirely differently to normal diamond-cubic silicon (Si-I) having different electrical properties. Two such phases, Si-III (BC8) and Si-XII (R8), can be formed by indentation but little is known about their electrical properties. Theoretical studies predict Si-III to be a semimetal [1] and Si-XII to be a narrow band gap semiconductor [2]. We report the first electrical measurements on these phases, which we have formed by nanoindentation. We demonstrate that Si-XII is a semiconductor that can be electrically doped with boron and phosphorus at room temperature. We also demonstrate early devices formed by nanoindentation at room temperature.
UR - http://www.scopus.com/inward/record.url?scp=79951751345&partnerID=8YFLogxK
U2 - 10.1109/COMMAD.2010.5699682
DO - 10.1109/COMMAD.2010.5699682
M3 - Conference contribution
SN - 9781424473328
T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
SP - 105
EP - 106
BT - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings
T2 - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010
Y2 - 12 December 2010 through 15 December 2010
ER -