@inproceedings{69837f2b878e4884bc4617a8e956b8ef,
title = "Electrical properties of Si-XII and Si-III formed by nanoindentation",
abstract = "Conventional silicon devices and integrated circuits are fabricated in the diamond cubic phase of silicon, so-called Si-I. Other phases of silicon can be formed under pressure applied by indentation and these phases are metastable at room-temperature and pressure. As we demonstrate, such phases behave entirely differently to normal diamond-cubic silicon (Si-I) having different electrical properties. Two such phases, Si-III (BC8) and Si-XII (R8), can be formed by indentation but little is known about their electrical properties. Theoretical studies predict Si-III to be a semimetal [1] and Si-XII to be a narrow band gap semiconductor [2]. We report the first electrical measurements on these phases, which we have formed by nanoindentation. We demonstrate that Si-XII is a semiconductor that can be electrically doped with boron and phosphorus at room temperature. We also demonstrate early devices formed by nanoindentation at room temperature.",
author = "Y. Wang and S. Ruffell and K. Sears and Knights, \{A. P.\} and Bradby, \{J. E.\} and Williams, \{J. S.\}",
year = "2010",
doi = "10.1109/COMMAD.2010.5699682",
language = "English",
isbn = "9781424473328",
series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",
pages = "105--106",
booktitle = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings",
note = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 ; Conference date: 12-12-2010 Through 15-12-2010",
}