Electrical transients in the ion-beam-induced nitridation of silicon

Mladen Petravic; Prakash N.K. Deenapanray

doi:10.1063/1.1376661

Electrical transients in the ion-beam-induced nitridation of silicon

Mladen Petravic^*, Prakash N.K. Deenapanray

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We have studied the dynamics of the initial stages of silicon nitride formation on silicon surfaces under nitrogen beam bombardment in the secondary ion mass spectrometry apparatus. We have shown that the secondary ion signal exhibits damped oscillations below the critical impact angle for nitride formation. We have described this oscillatory response by a second-order differential equation and argued that it is initiated by some fluctuations in film thickness followed by the fluctuations in surface charging.

Original language	English
Pages (from-to)	3445-3447
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	22
DOIs	https://doi.org/10.1063/1.1376661
Publication status	Published - 28 May 2001

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title = "Electrical transients in the ion-beam-induced nitridation of silicon",

abstract = "We have studied the dynamics of the initial stages of silicon nitride formation on silicon surfaces under nitrogen beam bombardment in the secondary ion mass spectrometry apparatus. We have shown that the secondary ion signal exhibits damped oscillations below the critical impact angle for nitride formation. We have described this oscillatory response by a second-order differential equation and argued that it is initiated by some fluctuations in film thickness followed by the fluctuations in surface charging.",

author = "Mladen Petravic and Deenapanray, {Prakash N.K.}",

year = "2001",

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AU - Deenapanray, Prakash N.K.

PY - 2001/5/28

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N2 - We have studied the dynamics of the initial stages of silicon nitride formation on silicon surfaces under nitrogen beam bombardment in the secondary ion mass spectrometry apparatus. We have shown that the secondary ion signal exhibits damped oscillations below the critical impact angle for nitride formation. We have described this oscillatory response by a second-order differential equation and argued that it is initiated by some fluctuations in film thickness followed by the fluctuations in surface charging.

AB - We have studied the dynamics of the initial stages of silicon nitride formation on silicon surfaces under nitrogen beam bombardment in the secondary ion mass spectrometry apparatus. We have shown that the secondary ion signal exhibits damped oscillations below the critical impact angle for nitride formation. We have described this oscillatory response by a second-order differential equation and argued that it is initiated by some fluctuations in film thickness followed by the fluctuations in surface charging.

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U2 - 10.1063/1.1376661

DO - 10.1063/1.1376661

M3 - Article

SN - 0003-6951

VL - 78

SP - 3445

EP - 3447

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

ER -

Electrical transients in the ion-beam-induced nitridation of silicon

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