Electrical transients in the ion-beam-induced nitridation of silicon

Mladen Petravic*, Prakash N.K. Deenapanray

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    4 Citations (Scopus)


    We have studied the dynamics of the initial stages of silicon nitride formation on silicon surfaces under nitrogen beam bombardment in the secondary ion mass spectrometry apparatus. We have shown that the secondary ion signal exhibits damped oscillations below the critical impact angle for nitride formation. We have described this oscillatory response by a second-order differential equation and argued that it is initiated by some fluctuations in film thickness followed by the fluctuations in surface charging.

    Original languageEnglish
    Pages (from-to)3445-3447
    Number of pages3
    JournalApplied Physics Letters
    Issue number22
    Publication statusPublished - 28 May 2001


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