Electron and trap dynamics in As-ion-implanted and annealed GaAs

L. Giniũnas; R. Danielius; H. H. Tan; C. Jagadish; R. Adomavičius; A. Krotkus

doi:10.1063/1.1356727

Electron and trap dynamics in As-ion-implanted and annealed GaAs

L. Giniũnas, R. Danielius, H. H. Tan, C. Jagadish, R. Adomavičius, A. Krotkus^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The ultrafast dynamics of As-ion-implanted and annealed GaAs is investigated using transmission pump-probe measurements. Carrier recombination time was found to increase from 4 to 40 ps with increasing annealing temperature. At lower annealing temperatures, the transmitted optical signal is dominated by induced absorption and at higher annealing temperatures this effect is replaced by induced transparency.

Original language	English
Pages (from-to)	1667-1669
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	12
DOIs	https://doi.org/10.1063/1.1356727
Publication status	Published - 19 Mar 2001

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title = "Electron and trap dynamics in As-ion-implanted and annealed GaAs",

abstract = "The ultrafast dynamics of As-ion-implanted and annealed GaAs is investigated using transmission pump-probe measurements. Carrier recombination time was found to increase from 4 to 40 ps with increasing annealing temperature. At lower annealing temperatures, the transmitted optical signal is dominated by induced absorption and at higher annealing temperatures this effect is replaced by induced transparency.",

author = "L. Giniũnas and R. Danielius and Tan, {H. H.} and C. Jagadish and R. Adomavi{\v c}ius and A. Krotkus",

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AU - Giniũnas, L.

AU - Danielius, R.

AU - Tan, H. H.

AU - Jagadish, C.

AU - Adomavičius, R.

AU - Krotkus, A.

PY - 2001/3/19

Y1 - 2001/3/19

N2 - The ultrafast dynamics of As-ion-implanted and annealed GaAs is investigated using transmission pump-probe measurements. Carrier recombination time was found to increase from 4 to 40 ps with increasing annealing temperature. At lower annealing temperatures, the transmitted optical signal is dominated by induced absorption and at higher annealing temperatures this effect is replaced by induced transparency.

AB - The ultrafast dynamics of As-ion-implanted and annealed GaAs is investigated using transmission pump-probe measurements. Carrier recombination time was found to increase from 4 to 40 ps with increasing annealing temperature. At lower annealing temperatures, the transmitted optical signal is dominated by induced absorption and at higher annealing temperatures this effect is replaced by induced transparency.

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U2 - 10.1063/1.1356727

DO - 10.1063/1.1356727

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VL - 78

SP - 1667

EP - 1669

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Electron and trap dynamics in As-ion-implanted and annealed GaAs

Abstract

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