Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors

Damon J. Carrad; Adam M. Burke; Roman W. Lyttleton; Hannah J. Joyce; Hark Hoe Tan; Chennupati Jagadish; Kristian Storm; Heiner Linke; Lars Samuelson; Adam P. Micolich

doi:10.1021/nl403299u

Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors

Damon J. Carrad, Adam M. Burke, Roman W. Lyttleton, Hannah J. Joyce, Hark Hoe Tan, Chennupati Jagadish, Kristian Storm, Heiner Linke, Lars Samuelson, Adam P. Micolich^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO₄ polymer electrolyte. We use the patterned polymer electrolyte as a high capacitance gate dielectric in single nanowire transistors and obtain subthreshold swings comparable to conventional metal/oxide wrap-gated nanowire transistors. Patterning eliminates gate/contact overlap, which reduces parasitic effects and enables multiple, independently controllable gates. The method's simplicity broadens the scope for using polymer electrolyte gating in studies of nanowires and other nanoscale devices.

Original language	English
Pages (from-to)	94-100
Number of pages	7
Journal	Nano Letters
Volume	14
Issue number	1
DOIs	https://doi.org/10.1021/nl403299u
Publication status	Published - 8 Jan 2014

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title = "Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors",

abstract = "We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO4 polymer electrolyte. We use the patterned polymer electrolyte as a high capacitance gate dielectric in single nanowire transistors and obtain subthreshold swings comparable to conventional metal/oxide wrap-gated nanowire transistors. Patterning eliminates gate/contact overlap, which reduces parasitic effects and enables multiple, independently controllable gates. The method's simplicity broadens the scope for using polymer electrolyte gating in studies of nanowires and other nanoscale devices.",

keywords = "III-V nanowires, electron beam lithography, nanoelectronics, polymer electrolytes",

author = "Carrad, {Damon J.} and Burke, {Adam M.} and Lyttleton, {Roman W.} and Joyce, {Hannah J.} and Tan, {Hark Hoe} and Chennupati Jagadish and Kristian Storm and Heiner Linke and Lars Samuelson and Micolich, {Adam P.}",

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doi = "10.1021/nl403299u",

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T1 - Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors

AU - Carrad, Damon J.

AU - Burke, Adam M.

AU - Lyttleton, Roman W.

AU - Joyce, Hannah J.

AU - Tan, Hark Hoe

AU - Jagadish, Chennupati

AU - Storm, Kristian

AU - Linke, Heiner

AU - Samuelson, Lars

AU - Micolich, Adam P.

PY - 2014/1/8

Y1 - 2014/1/8

N2 - We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO4 polymer electrolyte. We use the patterned polymer electrolyte as a high capacitance gate dielectric in single nanowire transistors and obtain subthreshold swings comparable to conventional metal/oxide wrap-gated nanowire transistors. Patterning eliminates gate/contact overlap, which reduces parasitic effects and enables multiple, independently controllable gates. The method's simplicity broadens the scope for using polymer electrolyte gating in studies of nanowires and other nanoscale devices.

AB - We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO4 polymer electrolyte. We use the patterned polymer electrolyte as a high capacitance gate dielectric in single nanowire transistors and obtain subthreshold swings comparable to conventional metal/oxide wrap-gated nanowire transistors. Patterning eliminates gate/contact overlap, which reduces parasitic effects and enables multiple, independently controllable gates. The method's simplicity broadens the scope for using polymer electrolyte gating in studies of nanowires and other nanoscale devices.

KW - III-V nanowires

KW - electron beam lithography

KW - nanoelectronics

KW - polymer electrolytes

UR - http://www.scopus.com/inward/record.url?scp=84892168441&partnerID=8YFLogxK

U2 - 10.1021/nl403299u

DO - 10.1021/nl403299u

M3 - Article

SN - 1530-6984

VL - 14

SP - 94

EP - 100

JO - Nano Letters

JF - Nano Letters

IS - 1

ER -

Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors

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