Electron-Conductive, Hole-Blocking Contact for Silicon Solar Cells

Xinbo Yang; Wenzhu Liu; Michele De Bastiani; Jingxuan Kang; Hang Xu; Erkan Aydin; Thomas Allen; Lujia Xu; A. Alsaggaf; Issam Gereige; Andres Cuevas; Stefaan De Wolf

doi:10.1109/PVSC40753.2019.8980855

Electron-Conductive, Hole-Blocking Contact for Silicon Solar Cells

Xinbo Yang, Wenzhu Liu, Michele De Bastiani, Jingxuan Kang, Hang Xu, Erkan Aydin, Thomas Allen, Lujia Xu, A. Alsaggaf, Issam Gereige, Andres Cuevas, Stefaan De Wolf

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We present an electron-conductive, hole-blocking contact for silicon solar cell in this work. Quasi-metallic titanium nitride (TiN), deposited by reactive magnetron sputtering, is proven to be an effective electron-selective contact for silicon solar cell, simultaneously achieving a low contact resistivity (ρ_c) of ∼ 16 mωcm² and a tolerable contact recombination parameter (J_0c) of ∼ 500 fA/cm². By the implementation of the dual-function SiO₂/TiN contact, which acts simultaneously as efficient surface passivating and metal electrode, a power conversion efficiency of 20% is achieved on an n-type silicon solar cell with a simple structure. This work demonstrates a way to develop efficient n-type Si solar cells with dual-function metal nitride contacts at a low cost.

Original language	English
Title of host publication	2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	3238-3242
Number of pages	5
ISBN (Electronic)	9781728104942
DOIs	https://doi.org/10.1109/PVSC40753.2019.8980855
Publication status	Published - Jun 2019
Event	46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States Duration: 16 Jun 2019 → 21 Jun 2019

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Country/Territory	United States
City	Chicago
Period	16/06/19 → 21/06/19

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10.1109/PVSC40753.2019.8980855

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Yang, X., Liu, W., Bastiani, M. D., Kang, J., Xu, H., Aydin, E., Allen, T., Xu, L., Alsaggaf, A., Gereige, I., Cuevas, A., & Wolf, S. D. (2019). Electron-Conductive, Hole-Blocking Contact for Silicon Solar Cells. In 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019 (pp. 3238-3242). Article 8980855 (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC40753.2019.8980855

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title = "Electron-Conductive, Hole-Blocking Contact for Silicon Solar Cells",

abstract = "We present an electron-conductive, hole-blocking contact for silicon solar cell in this work. Quasi-metallic titanium nitride (TiN), deposited by reactive magnetron sputtering, is proven to be an effective electron-selective contact for silicon solar cell, simultaneously achieving a low contact resistivity (ρc) of ∼ 16 mωcm2 and a tolerable contact recombination parameter (J0c) of ∼ 500 fA/cm2. By the implementation of the dual-function SiO2/TiN contact, which acts simultaneously as efficient surface passivating and metal electrode, a power conversion efficiency of 20% is achieved on an n-type silicon solar cell with a simple structure. This work demonstrates a way to develop efficient n-type Si solar cells with dual-function metal nitride contacts at a low cost.",

keywords = "Hole-blocking, passivating contact, silicon solar cell, titanium nitride",

author = "Xinbo Yang and Wenzhu Liu and Bastiani, {Michele De} and Jingxuan Kang and Hang Xu and Erkan Aydin and Thomas Allen and Lujia Xu and A. Alsaggaf and Issam Gereige and Andres Cuevas and Wolf, {Stefaan De}",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 46th IEEE Photovoltaic Specialists Conference, PVSC 2019 ; Conference date: 16-06-2019 Through 21-06-2019",

year = "2019",

month = jun,

doi = "10.1109/PVSC40753.2019.8980855",

language = "English",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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booktitle = "2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019",

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Yang, X, Liu, W, Bastiani, MD, Kang, J, Xu, H, Aydin, E, Allen, T, Xu, L, Alsaggaf, A, Gereige, I, Cuevas, A & Wolf, SD 2019, Electron-Conductive, Hole-Blocking Contact for Silicon Solar Cells. in 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019., 8980855, Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., pp. 3238-3242, 46th IEEE Photovoltaic Specialists Conference, PVSC 2019, Chicago, United States, 16/06/19. https://doi.org/10.1109/PVSC40753.2019.8980855

Electron-Conductive, Hole-Blocking Contact for Silicon Solar Cells. / Yang, Xinbo; Liu, Wenzhu; Bastiani, Michele De et al.
2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 3238-3242 8980855 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Electron-Conductive, Hole-Blocking Contact for Silicon Solar Cells

AU - Yang, Xinbo

AU - Liu, Wenzhu

AU - Bastiani, Michele De

AU - Kang, Jingxuan

AU - Xu, Hang

AU - Aydin, Erkan

AU - Allen, Thomas

AU - Xu, Lujia

AU - Alsaggaf, A.

AU - Gereige, Issam

AU - Cuevas, Andres

AU - Wolf, Stefaan De

PY - 2019/6

Y1 - 2019/6

N2 - We present an electron-conductive, hole-blocking contact for silicon solar cell in this work. Quasi-metallic titanium nitride (TiN), deposited by reactive magnetron sputtering, is proven to be an effective electron-selective contact for silicon solar cell, simultaneously achieving a low contact resistivity (ρc) of ∼ 16 mωcm2 and a tolerable contact recombination parameter (J0c) of ∼ 500 fA/cm2. By the implementation of the dual-function SiO2/TiN contact, which acts simultaneously as efficient surface passivating and metal electrode, a power conversion efficiency of 20% is achieved on an n-type silicon solar cell with a simple structure. This work demonstrates a way to develop efficient n-type Si solar cells with dual-function metal nitride contacts at a low cost.

AB - We present an electron-conductive, hole-blocking contact for silicon solar cell in this work. Quasi-metallic titanium nitride (TiN), deposited by reactive magnetron sputtering, is proven to be an effective electron-selective contact for silicon solar cell, simultaneously achieving a low contact resistivity (ρc) of ∼ 16 mωcm2 and a tolerable contact recombination parameter (J0c) of ∼ 500 fA/cm2. By the implementation of the dual-function SiO2/TiN contact, which acts simultaneously as efficient surface passivating and metal electrode, a power conversion efficiency of 20% is achieved on an n-type silicon solar cell with a simple structure. This work demonstrates a way to develop efficient n-type Si solar cells with dual-function metal nitride contacts at a low cost.

KW - Hole-blocking

KW - passivating contact

KW - silicon solar cell

KW - titanium nitride

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DO - 10.1109/PVSC40753.2019.8980855

M3 - Conference contribution

AN - SCOPUS:85081572776

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 3238

EP - 3242

BT - 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 46th IEEE Photovoltaic Specialists Conference, PVSC 2019

Y2 - 16 June 2019 through 21 June 2019

ER -

Yang X, Liu W, Bastiani MD, Kang J, Xu H, Aydin E et al. Electron-Conductive, Hole-Blocking Contact for Silicon Solar Cells. In 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 3238-3242. 8980855. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC40753.2019.8980855

Electron-Conductive, Hole-Blocking Contact for Silicon Solar Cells

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