Electron emission properties of a defect at ∼(Ec-0.23 eV) in impurity-free disordered n-GaAs

P. N.K. Deenapanray; W. E. Meyer; F. D. Auret; M. Krispin; C. Jagadish

doi:10.1016/j.physb.2003.09.084

Electron emission properties of a defect at ∼(E_c-0.23 eV) in impurity-free disordered n-GaAs

P. N.K. Deenapanray^*, W. E. Meyer, F. D. Auret, M. Krispin, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

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Abstract

We have used deep level transient spectroscopy to study the electric-field-enhanced electron emission rate from a defect S1 observed in impurity-free disordered n-GaAs. The field dependence of emission rate could be well described by the electron emission from a Gaussian potential well with ground energy state ∼0.25 eV. The phonon-assisted tunneling model with a triangular barrier could also adequately fit our experimental data for a large localized quasi-stationary energy level of ∼0.57 eV. Our modeling shows that a medium-range potential is associated with S1, showing it cannot be a point defect. The possible complex structure of S1 is discussed in terms of the arsenic antisite, As_Ga, and the arsenic interstitial, As _i, based on our results and by drawing on the theoretical modeling of defects in nonstoichiometric (As-rich) GaAs.

Original language	English
Pages (from-to)	315-319
Number of pages	5
Journal	Physica B: Condensed Matter
Volume	340-342
DOIs	https://doi.org/10.1016/j.physb.2003.09.084
Publication status	Published - 31 Dec 2003
Event	Proceedings of the 22nd International Conference on Defects in (ICDS-22) - Aarhus, Denmark Duration: 28 Jul 2003 → 1 Aug 2003

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@article{6f1670d25e5840bfa0df01511734c047,

title = "Electron emission properties of a defect at ∼(Ec-0.23 eV) in impurity-free disordered n-GaAs",

abstract = "We have used deep level transient spectroscopy to study the electric-field-enhanced electron emission rate from a defect S1 observed in impurity-free disordered n-GaAs. The field dependence of emission rate could be well described by the electron emission from a Gaussian potential well with ground energy state ∼0.25 eV. The phonon-assisted tunneling model with a triangular barrier could also adequately fit our experimental data for a large localized quasi-stationary energy level of ∼0.57 eV. Our modeling shows that a medium-range potential is associated with S1, showing it cannot be a point defect. The possible complex structure of S1 is discussed in terms of the arsenic antisite, AsGa, and the arsenic interstitial, As i, based on our results and by drawing on the theoretical modeling of defects in nonstoichiometric (As-rich) GaAs.",

keywords = "Deep-level transient spectroscopy, Defects, GaAs, Impurity-free disordering",

author = "Deenapanray, {P. N.K.} and Meyer, {W. E.} and Auret, {F. D.} and M. Krispin and C. Jagadish",

year = "2003",

month = dec,

day = "31",

doi = "10.1016/j.physb.2003.09.084",

language = "English",

volume = "340-342",

pages = "315--319",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier B.V.",

note = "Proceedings of the 22nd International Conference on Defects in (ICDS-22) ; Conference date: 28-07-2003 Through 01-08-2003",

}

TY - JOUR

T1 - Electron emission properties of a defect at ∼(Ec-0.23 eV) in impurity-free disordered n-GaAs

AU - Deenapanray, P. N.K.

AU - Meyer, W. E.

AU - Auret, F. D.

AU - Krispin, M.

AU - Jagadish, C.

PY - 2003/12/31

Y1 - 2003/12/31

N2 - We have used deep level transient spectroscopy to study the electric-field-enhanced electron emission rate from a defect S1 observed in impurity-free disordered n-GaAs. The field dependence of emission rate could be well described by the electron emission from a Gaussian potential well with ground energy state ∼0.25 eV. The phonon-assisted tunneling model with a triangular barrier could also adequately fit our experimental data for a large localized quasi-stationary energy level of ∼0.57 eV. Our modeling shows that a medium-range potential is associated with S1, showing it cannot be a point defect. The possible complex structure of S1 is discussed in terms of the arsenic antisite, AsGa, and the arsenic interstitial, As i, based on our results and by drawing on the theoretical modeling of defects in nonstoichiometric (As-rich) GaAs.

AB - We have used deep level transient spectroscopy to study the electric-field-enhanced electron emission rate from a defect S1 observed in impurity-free disordered n-GaAs. The field dependence of emission rate could be well described by the electron emission from a Gaussian potential well with ground energy state ∼0.25 eV. The phonon-assisted tunneling model with a triangular barrier could also adequately fit our experimental data for a large localized quasi-stationary energy level of ∼0.57 eV. Our modeling shows that a medium-range potential is associated with S1, showing it cannot be a point defect. The possible complex structure of S1 is discussed in terms of the arsenic antisite, AsGa, and the arsenic interstitial, As i, based on our results and by drawing on the theoretical modeling of defects in nonstoichiometric (As-rich) GaAs.

KW - Deep-level transient spectroscopy

KW - Defects

KW - GaAs

KW - Impurity-free disordering

UR - http://www.scopus.com/inward/record.url?scp=0346504205&partnerID=8YFLogxK

U2 - 10.1016/j.physb.2003.09.084

DO - 10.1016/j.physb.2003.09.084

M3 - Conference article

SN - 0921-4526

VL - 340-342

SP - 315

EP - 319

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

T2 - Proceedings of the 22nd International Conference on Defects in (ICDS-22)

Y2 - 28 July 2003 through 1 August 2003

ER -

Electron emission properties of a defect at ∼(E_c-0.23 eV) in impurity-free disordered n-GaAs

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