TY - JOUR
T1 - Electron energy structure of self-assembled In(Ga)As nanostructures probed by capacitance-voltage spectroscopy and one-dimensional numerical simulation
AU - Lei, Wen
AU - Notthoff, Christian
AU - Offer, Matthias
AU - Meier, Cedrik
AU - Lorke, Axel
AU - Jagadish, Chennupati
AU - Wieck, Andreas D.
PY - 2009/7
Y1 - 2009/7
N2 - The electron energy structure of self-assembled In(Ga)As/GaAs nanostructures, quantum dots, and quantum rings was studied with capacitance-voltage spectroscopy and one-dimensional numerical simulation using Poisson/Schrödinger equations. The electron energy levels in the quantum dots and quantum rings with respect to the electron ground state of the wetting layer were determined directly from capacitance-voltage measurements with a linear lever arm approximation. In the regime where the linear lever arm approximation was not valid anymore (after the charging of the wetting layer), the energy difference between the electron ground state of the wetting layer and the GaAs conduction band edge was obtained indirectly from a numerical simulation of the conduction band under different gate voltages, which led to the erection of complete electron energy levels of the nanostructures in the conduction band.
AB - The electron energy structure of self-assembled In(Ga)As/GaAs nanostructures, quantum dots, and quantum rings was studied with capacitance-voltage spectroscopy and one-dimensional numerical simulation using Poisson/Schrödinger equations. The electron energy levels in the quantum dots and quantum rings with respect to the electron ground state of the wetting layer were determined directly from capacitance-voltage measurements with a linear lever arm approximation. In the regime where the linear lever arm approximation was not valid anymore (after the charging of the wetting layer), the energy difference between the electron ground state of the wetting layer and the GaAs conduction band edge was obtained indirectly from a numerical simulation of the conduction band under different gate voltages, which led to the erection of complete electron energy levels of the nanostructures in the conduction band.
UR - http://www.scopus.com/inward/record.url?scp=68149116294&partnerID=8YFLogxK
U2 - 10.1557/jmr.2009.0293
DO - 10.1557/jmr.2009.0293
M3 - Article
SN - 0884-2914
VL - 24
SP - 2179
EP - 2184
JO - Journal of Materials Research
JF - Journal of Materials Research
IS - 7
ER -