Electron excitation of the Group IV elements

R. Srivastava; R. P. McEachran; A. D. Stauffer

doi:10.1139/p02-012

Electron excitation of the Group IV elements

R. Srivastava, R. P. McEachran, A. D. Stauffer^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We investigated the electron excitation of the fine-structure levels of the ³P ground state and the first excited ¹D state of the first four elements of Group IV: carbon, silicon, germanium, and tin. These calculations were carried out in the j-j coupling scheme using the relativistic distorted-wave method. Results are presented for the differential cross sections and spin-polarization parameters for incident electron energies of 25 and 40 eV.

Original language	English
Pages (from-to)	687-696
Number of pages	10
Journal	Canadian Journal of Physics
Volume	80
Issue number	6
DOIs	https://doi.org/10.1139/p02-012
Publication status	Published - 2002
Externally published	Yes

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@article{53d9a61c6689475892ea5a878f90a3a3,

title = "Electron excitation of the Group IV elements",

abstract = "We investigated the electron excitation of the fine-structure levels of the 3P ground state and the first excited 1D state of the first four elements of Group IV: carbon, silicon, germanium, and tin. These calculations were carried out in the j-j coupling scheme using the relativistic distorted-wave method. Results are presented for the differential cross sections and spin-polarization parameters for incident electron energies of 25 and 40 eV.",

author = "R. Srivastava and McEachran, {R. P.} and Stauffer, {A. D.}",

year = "2002",

doi = "10.1139/p02-012",

language = "English",

volume = "80",

pages = "687--696",

journal = "Canadian Journal of Physics",

issn = "0008-4204",

publisher = "National Research Council of Canada",

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T1 - Electron excitation of the Group IV elements

AU - Srivastava, R.

AU - McEachran, R. P.

AU - Stauffer, A. D.

PY - 2002

Y1 - 2002

N2 - We investigated the electron excitation of the fine-structure levels of the 3P ground state and the first excited 1D state of the first four elements of Group IV: carbon, silicon, germanium, and tin. These calculations were carried out in the j-j coupling scheme using the relativistic distorted-wave method. Results are presented for the differential cross sections and spin-polarization parameters for incident electron energies of 25 and 40 eV.

AB - We investigated the electron excitation of the fine-structure levels of the 3P ground state and the first excited 1D state of the first four elements of Group IV: carbon, silicon, germanium, and tin. These calculations were carried out in the j-j coupling scheme using the relativistic distorted-wave method. Results are presented for the differential cross sections and spin-polarization parameters for incident electron energies of 25 and 40 eV.

UR - http://www.scopus.com/inward/record.url?scp=57249100469&partnerID=8YFLogxK

U2 - 10.1139/p02-012

DO - 10.1139/p02-012

M3 - Article

SN - 0008-4204

VL - 80

SP - 687

EP - 696

JO - Canadian Journal of Physics

JF - Canadian Journal of Physics

IS - 6

ER -

Electron excitation of the Group IV elements

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