Electron-hole recombination properties of In0.5 Ga0.5 As/GaAs quantum dot solar cells and the influence on the open circuit voltage

Greg Jolley; Hao Feng Lu; Lan Fu; Hark Hoe Tan; Chennupati Jagadish

doi:10.1063/1.3492836

Electron-hole recombination properties of In_0.5 Ga_0.5 As/GaAs quantum dot solar cells and the influence on the open circuit voltage

Greg Jolley^*, Hao Feng Lu, Lan Fu, Hark Hoe Tan, Chennupati Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

48 Citations (Scopus)

Abstract

We report on a detailed analysis of the temperature dependent electrical properties of In_0.5 Ga_0.5 As/GaAs quantum dot solar cells. The effects leading to a reduction in the open circuit voltage are found to be the thermal injection of carriers from the n and p-type layers into the depletion region where they recombine with carriers occupying quantum dot states due to a thermal distribution. The departure of the device studied here from an ideal intermediate band solar cell is discussed.

Original language	English
Article number	123505
Journal	Applied Physics Letters
Volume	97
Issue number	12
DOIs	https://doi.org/10.1063/1.3492836
Publication status	Published - 20 Sept 2010

Access to Document

10.1063/1.3492836

Cite this

@article{6e867d1bb0204c7888a15ab1e706b0ec,

title = "Electron-hole recombination properties of In0.5 Ga0.5 As/GaAs quantum dot solar cells and the influence on the open circuit voltage",

abstract = "We report on a detailed analysis of the temperature dependent electrical properties of In0.5 Ga0.5 As/GaAs quantum dot solar cells. The effects leading to a reduction in the open circuit voltage are found to be the thermal injection of carriers from the n and p-type layers into the depletion region where they recombine with carriers occupying quantum dot states due to a thermal distribution. The departure of the device studied here from an ideal intermediate band solar cell is discussed.",

author = "Greg Jolley and Lu, {Hao Feng} and Lan Fu and Tan, {Hark Hoe} and Chennupati Jagadish",

year = "2010",

month = sep,

day = "20",

doi = "10.1063/1.3492836",

language = "English",

volume = "97",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "12",

}

TY - JOUR

T1 - Electron-hole recombination properties of In0.5 Ga0.5 As/GaAs quantum dot solar cells and the influence on the open circuit voltage

AU - Jolley, Greg

AU - Lu, Hao Feng

AU - Fu, Lan

AU - Tan, Hark Hoe

AU - Jagadish, Chennupati

PY - 2010/9/20

Y1 - 2010/9/20

N2 - We report on a detailed analysis of the temperature dependent electrical properties of In0.5 Ga0.5 As/GaAs quantum dot solar cells. The effects leading to a reduction in the open circuit voltage are found to be the thermal injection of carriers from the n and p-type layers into the depletion region where they recombine with carriers occupying quantum dot states due to a thermal distribution. The departure of the device studied here from an ideal intermediate band solar cell is discussed.

AB - We report on a detailed analysis of the temperature dependent electrical properties of In0.5 Ga0.5 As/GaAs quantum dot solar cells. The effects leading to a reduction in the open circuit voltage are found to be the thermal injection of carriers from the n and p-type layers into the depletion region where they recombine with carriers occupying quantum dot states due to a thermal distribution. The departure of the device studied here from an ideal intermediate band solar cell is discussed.

UR - http://www.scopus.com/inward/record.url?scp=77957167347&partnerID=8YFLogxK

U2 - 10.1063/1.3492836

DO - 10.1063/1.3492836

M3 - Article

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 123505

ER -

Electron-hole recombination properties of In_0.5 Ga_0.5 As/GaAs quantum dot solar cells and the influence on the open circuit voltage

Abstract

Access to Document

Other files and links

Fingerprint

Cite this