Electron-hole recombination properties of In0.5 Ga0.5 As/GaAs quantum dot solar cells and the influence on the open circuit voltage

Greg Jolley; Hao Feng Lu; Lan Fu; Hark Hoe Tan; Chennupati Jagadish

doi:10.1063/1.3492836

Electron-hole recombination properties of In_0.5 Ga_0.5 As/GaAs quantum dot solar cells and the influence on the open circuit voltage

Greg Jolley^*, Hao Feng Lu, Lan Fu, Hark Hoe Tan, Chennupati Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

49 Citations (SciVal)

Abstract

We report on a detailed analysis of the temperature dependent electrical properties of In_0.5 Ga_0.5 As/GaAs quantum dot solar cells. The effects leading to a reduction in the open circuit voltage are found to be the thermal injection of carriers from the n and p-type layers into the depletion region where they recombine with carriers occupying quantum dot states due to a thermal distribution. The departure of the device studied here from an ideal intermediate band solar cell is discussed.

Original language	English
Article number	123505
Journal	Applied Physics Letters
Volume	97
Issue number	12
DOIs	https://doi.org/10.1063/1.3492836
Publication status	Published - 20 Sept 2010

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AU - Tan, Hark Hoe

AU - Jagadish, Chennupati

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Electron-hole recombination properties of In_0.5 Ga_0.5 As/GaAs quantum dot solar cells and the influence on the open circuit voltage

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