Electron-phonon processes of the silicon-vacancy centre in diamond

Kay D. Jahnke; Alp Sipahigil; Jan M. Binder; Marcus W. Doherty; Mathias Metsch; Lachlan J. Rogers; Neil B. Manson; Mikhail D. Lukin; Fedor Jelezko

doi:10.1088/1367-2630/17/4/043011

Electron-phonon processes of the silicon-vacancy centre in diamond

Kay D. Jahnke, Alp Sipahigil, Jan M. Binder, Marcus W. Doherty, Mathias Metsch, Lachlan J. Rogers, Neil B. Manson, Mikhail D. Lukin, Fedor Jelezko

Research output: Contribution to journal › Article › peer-review

227 Citations (Scopus)

Abstract

We investigate phonon induced electronic dynamics in the ground and excited states of the negatively charged silicon-vacancy (SiV^-) centre in diamond. Optical transition linewidths, transition wavelength and excited state lifetimes are measured for the temperature range 4 K-350 K. The ground state orbital relaxation rates are measured using time-resolved fluorescence techniques. Amicroscopic model of the thermal broadening in the excited and ground states of the SiV^- centre is developed. A vibronic process involving single-phonon transitions is found to determine orbital relaxation rates for both the ground and the excited states at cryogenic temperatures.Wediscuss the implications of our findings for coherence of qubits in the ground states and propose methods to extend coherence times of SiV^- qubits.

Original language	English
Article number	043011
Journal	New Journal of Physics
Volume	17
DOIs	https://doi.org/10.1088/1367-2630/17/4/043011
Publication status	Published - 1 Apr 2015

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@article{40138022e6844b1e96cbf68f410f1441,

title = "Electron-phonon processes of the silicon-vacancy centre in diamond",

abstract = "We investigate phonon induced electronic dynamics in the ground and excited states of the negatively charged silicon-vacancy (SiV-) centre in diamond. Optical transition linewidths, transition wavelength and excited state lifetimes are measured for the temperature range 4 K-350 K. The ground state orbital relaxation rates are measured using time-resolved fluorescence techniques. Amicroscopic model of the thermal broadening in the excited and ground states of the SiV- centre is developed. A vibronic process involving single-phonon transitions is found to determine orbital relaxation rates for both the ground and the excited states at cryogenic temperatures.Wediscuss the implications of our findings for coherence of qubits in the ground states and propose methods to extend coherence times of SiV- qubits.",

keywords = "colour center, diamond, optical transitions, phonon, relaxation time, silicon vacancy, temperature",

author = "Jahnke, {Kay D.} and Alp Sipahigil and Binder, {Jan M.} and Doherty, {Marcus W.} and Mathias Metsch and Rogers, {Lachlan J.} and Manson, {Neil B.} and Lukin, {Mikhail D.} and Fedor Jelezko",

note = "Publisher Copyright: {\textcopyright} 2015 IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.",

year = "2015",

month = apr,

day = "1",

doi = "10.1088/1367-2630/17/4/043011",

language = "English",

volume = "17",

journal = "New Journal of Physics",

publisher = "IOP Publishing Ltd.",

}

TY - JOUR

T1 - Electron-phonon processes of the silicon-vacancy centre in diamond

AU - Jahnke, Kay D.

AU - Sipahigil, Alp

AU - Binder, Jan M.

AU - Doherty, Marcus W.

AU - Metsch, Mathias

AU - Rogers, Lachlan J.

AU - Manson, Neil B.

AU - Lukin, Mikhail D.

AU - Jelezko, Fedor

PY - 2015/4/1

Y1 - 2015/4/1

N2 - We investigate phonon induced electronic dynamics in the ground and excited states of the negatively charged silicon-vacancy (SiV-) centre in diamond. Optical transition linewidths, transition wavelength and excited state lifetimes are measured for the temperature range 4 K-350 K. The ground state orbital relaxation rates are measured using time-resolved fluorescence techniques. Amicroscopic model of the thermal broadening in the excited and ground states of the SiV- centre is developed. A vibronic process involving single-phonon transitions is found to determine orbital relaxation rates for both the ground and the excited states at cryogenic temperatures.Wediscuss the implications of our findings for coherence of qubits in the ground states and propose methods to extend coherence times of SiV- qubits.

AB - We investigate phonon induced electronic dynamics in the ground and excited states of the negatively charged silicon-vacancy (SiV-) centre in diamond. Optical transition linewidths, transition wavelength and excited state lifetimes are measured for the temperature range 4 K-350 K. The ground state orbital relaxation rates are measured using time-resolved fluorescence techniques. Amicroscopic model of the thermal broadening in the excited and ground states of the SiV- centre is developed. A vibronic process involving single-phonon transitions is found to determine orbital relaxation rates for both the ground and the excited states at cryogenic temperatures.Wediscuss the implications of our findings for coherence of qubits in the ground states and propose methods to extend coherence times of SiV- qubits.

KW - colour center

KW - diamond

KW - optical transitions

KW - phonon

KW - relaxation time

KW - silicon vacancy

KW - temperature

UR - http://www.scopus.com/inward/record.url?scp=84929602813&partnerID=8YFLogxK

U2 - 10.1088/1367-2630/17/4/043011

DO - 10.1088/1367-2630/17/4/043011

M3 - Article

VL - 17

JO - New Journal of Physics

JF - New Journal of Physics

M1 - 043011

ER -

Electron-phonon processes of the silicon-vacancy centre in diamond

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