Electron transfer efficiency of Si δ-modulation-doped pseudomorphic GaAs/In0.2Ga0.8As/AlxGa1-xAs quantum wells

Gang Li; A. Babinski; S. J. Chua; C. Jagadish

doi:10.1063/1.121349

Electron transfer efficiency of Si δ-modulation-doped pseudomorphic GaAs/In_0.2Ga_0.8As/Al_xGa_1-xAs quantum wells

Gang Li^*, A. Babinski, S. J. Chua, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

In Si δ-modulation-doped GaAs/In_0.2Ga_0.8As/Al_xGa_1-xAs quantum well structures (QWs), the electrons from the ionized Si donors are initially confined in the V-shaped potential well (V-PW) formed at the position of a Si δ-doped layer. The efficiency of electrons transferring from the V-PW to the QW was investigated as a function of Si δ-doping concentration in the symmetric GaAs/In_0.2Ga_0.8As/GaAs QW at 1.7 K. The electron density in the QW increases linearly with an increase of Si δ-doping concentration, while the electron transfer efficiency remains unchanged either in the dark or under the illumination. The asymmetric GaAs/In_0.2Ga_0.8As/Al_0.2Ga_0.8As QW has a relatively higher electron transfer efficiency. The effect of grading the Al mole fraction over the Al_xGa_1-xAs spacer layer on the electron transfer efficiency was also reported.

Original language	English
Pages (from-to)	2322-2324
Number of pages	3
Journal	Applied Physics Letters
Volume	72
Issue number	18
DOIs	https://doi.org/10.1063/1.121349
Publication status	Published - 1998

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title = "Electron transfer efficiency of Si δ-modulation-doped pseudomorphic GaAs/In0.2Ga0.8As/AlxGa1-xAs quantum wells",

abstract = "In Si δ-modulation-doped GaAs/In0.2Ga0.8As/AlxGa1-xAs quantum well structures (QWs), the electrons from the ionized Si donors are initially confined in the V-shaped potential well (V-PW) formed at the position of a Si δ-doped layer. The efficiency of electrons transferring from the V-PW to the QW was investigated as a function of Si δ-doping concentration in the symmetric GaAs/In0.2Ga0.8As/GaAs QW at 1.7 K. The electron density in the QW increases linearly with an increase of Si δ-doping concentration, while the electron transfer efficiency remains unchanged either in the dark or under the illumination. The asymmetric GaAs/In0.2Ga0.8As/Al0.2Ga0.8As QW has a relatively higher electron transfer efficiency. The effect of grading the Al mole fraction over the AlxGa1-xAs spacer layer on the electron transfer efficiency was also reported.",

author = "Gang Li and A. Babinski and Chua, {S. J.} and C. Jagadish",

year = "1998",

doi = "10.1063/1.121349",

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pages = "2322--2324",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Electron transfer efficiency of Si δ-modulation-doped pseudomorphic GaAs/In0.2Ga0.8As/AlxGa1-xAs quantum wells

AU - Li, Gang

AU - Babinski, A.

AU - Chua, S. J.

AU - Jagadish, C.

PY - 1998

Y1 - 1998

N2 - In Si δ-modulation-doped GaAs/In0.2Ga0.8As/AlxGa1-xAs quantum well structures (QWs), the electrons from the ionized Si donors are initially confined in the V-shaped potential well (V-PW) formed at the position of a Si δ-doped layer. The efficiency of electrons transferring from the V-PW to the QW was investigated as a function of Si δ-doping concentration in the symmetric GaAs/In0.2Ga0.8As/GaAs QW at 1.7 K. The electron density in the QW increases linearly with an increase of Si δ-doping concentration, while the electron transfer efficiency remains unchanged either in the dark or under the illumination. The asymmetric GaAs/In0.2Ga0.8As/Al0.2Ga0.8As QW has a relatively higher electron transfer efficiency. The effect of grading the Al mole fraction over the AlxGa1-xAs spacer layer on the electron transfer efficiency was also reported.

AB - In Si δ-modulation-doped GaAs/In0.2Ga0.8As/AlxGa1-xAs quantum well structures (QWs), the electrons from the ionized Si donors are initially confined in the V-shaped potential well (V-PW) formed at the position of a Si δ-doped layer. The efficiency of electrons transferring from the V-PW to the QW was investigated as a function of Si δ-doping concentration in the symmetric GaAs/In0.2Ga0.8As/GaAs QW at 1.7 K. The electron density in the QW increases linearly with an increase of Si δ-doping concentration, while the electron transfer efficiency remains unchanged either in the dark or under the illumination. The asymmetric GaAs/In0.2Ga0.8As/Al0.2Ga0.8As QW has a relatively higher electron transfer efficiency. The effect of grading the Al mole fraction over the AlxGa1-xAs spacer layer on the electron transfer efficiency was also reported.

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U2 - 10.1063/1.121349

DO - 10.1063/1.121349

M3 - Article

SN - 0003-6951

VL - 72

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EP - 2324

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

Electron transfer efficiency of Si δ-modulation-doped pseudomorphic GaAs/In_0.2Ga_0.8As/Al_xGa_1-xAs quantum wells

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