Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors

A. R. Ullah; H. J. Joyce; A. M. Burke; J. Wong-Leung; H. H. Tan; C. Jagadish; A. P. Micolich

doi:10.1002/pssr.201308014

Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors

A. R. Ullah, H. J. Joyce, A. M. Burke, J. Wong-Leung, H. H. Tan, C. Jagadish, A. P. Micolich^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

We compare the electronic characteristics of nanowire field-effect transistors made using single pure wurtzite and pure zincblende InAs nanowires grown from identical catalyst particles. We compare the transfer characteristics and field-effect mobility versus temperature for these devices to better understand how differences in InAs phase govern the electronic properties of nanowire transistors.

Original language	English
Pages (from-to)	911-914
Number of pages	4
Journal	Physica Status Solidi - Rapid Research Letters
Volume	7
Issue number	10
DOIs	https://doi.org/10.1002/pssr.201308014
Publication status	Published - Oct 2013

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@article{4f823b3fd2024860935a193440b17db3,

title = "Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors",

abstract = "We compare the electronic characteristics of nanowire field-effect transistors made using single pure wurtzite and pure zincblende InAs nanowires grown from identical catalyst particles. We compare the transfer characteristics and field-effect mobility versus temperature for these devices to better understand how differences in InAs phase govern the electronic properties of nanowire transistors.",

keywords = "InAs, Nanowire FETs, Wurtzite, Zincblende",

author = "Ullah, {A. R.} and Joyce, {H. J.} and Burke, {A. M.} and J. Wong-Leung and Tan, {H. H.} and C. Jagadish and Micolich, {A. P.}",

year = "2013",

month = oct,

doi = "10.1002/pssr.201308014",

language = "English",

volume = "7",

pages = "911--914",

journal = "Physica Status Solidi - Rapid Research Letters",

issn = "1862-6254",

publisher = "Wiley-VCH Verlag GmbH",

number = "10",

}

TY - JOUR

T1 - Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors

AU - Ullah, A. R.

AU - Joyce, H. J.

AU - Burke, A. M.

AU - Wong-Leung, J.

AU - Tan, H. H.

AU - Jagadish, C.

AU - Micolich, A. P.

PY - 2013/10

Y1 - 2013/10

N2 - We compare the electronic characteristics of nanowire field-effect transistors made using single pure wurtzite and pure zincblende InAs nanowires grown from identical catalyst particles. We compare the transfer characteristics and field-effect mobility versus temperature for these devices to better understand how differences in InAs phase govern the electronic properties of nanowire transistors.

AB - We compare the electronic characteristics of nanowire field-effect transistors made using single pure wurtzite and pure zincblende InAs nanowires grown from identical catalyst particles. We compare the transfer characteristics and field-effect mobility versus temperature for these devices to better understand how differences in InAs phase govern the electronic properties of nanowire transistors.

KW - InAs

KW - Nanowire FETs

KW - Wurtzite

KW - Zincblende

UR - http://www.scopus.com/inward/record.url?scp=84885872293&partnerID=8YFLogxK

U2 - 10.1002/pssr.201308014

DO - 10.1002/pssr.201308014

M3 - Article

SN - 1862-6254

VL - 7

SP - 911

EP - 914

JO - Physica Status Solidi - Rapid Research Letters

JF - Physica Status Solidi - Rapid Research Letters

IS - 10

ER -

Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors

Abstract

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