Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors

A. R. Ullah; H. J. Joyce; A. M. Burke; J. Wong-Leung; H. H. Tan; C. Jagadish; A. P. Micolich

doi:10.1002/pssr.201308014

Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors

A. R. Ullah, H. J. Joyce, A. M. Burke, J. Wong-Leung, H. H. Tan, C. Jagadish, A. P. Micolich^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

We compare the electronic characteristics of nanowire field-effect transistors made using single pure wurtzite and pure zincblende InAs nanowires grown from identical catalyst particles. We compare the transfer characteristics and field-effect mobility versus temperature for these devices to better understand how differences in InAs phase govern the electronic properties of nanowire transistors.

Original language	English
Pages (from-to)	911-914
Number of pages	4
Journal	Physica Status Solidi - Rapid Research Letters
Volume	7
Issue number	10
DOIs	https://doi.org/10.1002/pssr.201308014
Publication status	Published - Oct 2013

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10.1002/pssr.201308014

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abstract = "We compare the electronic characteristics of nanowire field-effect transistors made using single pure wurtzite and pure zincblende InAs nanowires grown from identical catalyst particles. We compare the transfer characteristics and field-effect mobility versus temperature for these devices to better understand how differences in InAs phase govern the electronic properties of nanowire transistors.",

keywords = "InAs, Nanowire FETs, Wurtzite, Zincblende",

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AU - Ullah, A. R.

AU - Joyce, H. J.

AU - Burke, A. M.

AU - Wong-Leung, J.

AU - Tan, H. H.

AU - Jagadish, C.

AU - Micolich, A. P.

PY - 2013/10

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N2 - We compare the electronic characteristics of nanowire field-effect transistors made using single pure wurtzite and pure zincblende InAs nanowires grown from identical catalyst particles. We compare the transfer characteristics and field-effect mobility versus temperature for these devices to better understand how differences in InAs phase govern the electronic properties of nanowire transistors.

AB - We compare the electronic characteristics of nanowire field-effect transistors made using single pure wurtzite and pure zincblende InAs nanowires grown from identical catalyst particles. We compare the transfer characteristics and field-effect mobility versus temperature for these devices to better understand how differences in InAs phase govern the electronic properties of nanowire transistors.

KW - InAs

KW - Nanowire FETs

KW - Wurtzite

KW - Zincblende

UR - https://www.scopus.com/pages/publications/84885872293

U2 - 10.1002/pssr.201308014

DO - 10.1002/pssr.201308014

M3 - Article

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JO - Physica Status Solidi - Rapid Research Letters

JF - Physica Status Solidi - Rapid Research Letters

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ER -

Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors

Abstract

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