Abstract
Gold-fullerite [C 60]-silicon (p-type) sandwich structures have been fabricated in order to investigate intrinsic cross-sectional and planar electronic conductive properties, in particular the C 60/p-Si p-n heterojunction. The turn-on voltage of this p-n heterojunction lies in the range 0.25-0.27 V. The I-V characteristics of the Au/C 60/p-Si structure are mostly defined by the bulk specific resistance of the fullerite crystal film itself (∼6×10 7Ωcm). I-V curves in the C 60/Au/p-Si structure are shown to be ohmic. Au/C 60/p-Si sandwiches irradiated with swift (300MeV) heavy ions, ( 84Kr 14+) to a total fluence ∼10 10ion/cm 2 yield structures which are sensitive to ambient air pressure, specifically in the case of a transverse contact configuration, and if one of the contacts is located on the irradiated part of the fullerite film. The sandwich-structure sensitivity to pressure is ∼5×10 -6Pa -1. This exceeds the sensitivity of conventional silicon pressure transducers by almost three orders of magnitude.
Original language | English |
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Pages (from-to) | 809-814 |
Number of pages | 6 |
Journal | Solid State Communications |
Volume | 130 |
Issue number | 12 |
DOIs | |
Publication status | Published - Jun 2004 |