Electronic conduction properties of Au/C 60/p-Si and C 60/Au/p-Si sandwich structures: I-V and transducer characteristics

A. S. Berdinsky, D. Fink, Ji Beom Yoo*, L. T. Chadderton, Hui Gon Chun, Jae Hee Han, V. P. Dragunov

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    6 Citations (Scopus)

    Abstract

    Gold-fullerite [C 60]-silicon (p-type) sandwich structures have been fabricated in order to investigate intrinsic cross-sectional and planar electronic conductive properties, in particular the C 60/p-Si p-n heterojunction. The turn-on voltage of this p-n heterojunction lies in the range 0.25-0.27 V. The I-V characteristics of the Au/C 60/p-Si structure are mostly defined by the bulk specific resistance of the fullerite crystal film itself (∼6×10 7Ωcm). I-V curves in the C 60/Au/p-Si structure are shown to be ohmic. Au/C 60/p-Si sandwiches irradiated with swift (300MeV) heavy ions, ( 84Kr 14+) to a total fluence ∼10 10ion/cm 2 yield structures which are sensitive to ambient air pressure, specifically in the case of a transverse contact configuration, and if one of the contacts is located on the irradiated part of the fullerite film. The sandwich-structure sensitivity to pressure is ∼5×10 -6Pa -1. This exceeds the sensitivity of conventional silicon pressure transducers by almost three orders of magnitude.

    Original languageEnglish
    Pages (from-to)809-814
    Number of pages6
    JournalSolid State Communications
    Volume130
    Issue number12
    DOIs
    Publication statusPublished - Jun 2004

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