Electronic confinement in modulation doped quantum dots

B. Puthen Veettil; D. Koenig; R. Patterson; S. Smyth; G. Conibeer

doi:10.1063/1.4871576

Electronic confinement in modulation doped quantum dots

B. Puthen Veettil, D. Koenig, R. Patterson, S. Smyth, G. Conibeer

Research output: Contribution to journal › Literature review › peer-review

1 Citation (Scopus)

Abstract

Modulation doping, an effective way to dope quantum dots (QDs), modifies the confinement energy levels in the QDs. We present a self-consistent full multi-grid solver to analyze the effect of modulation doping on the confinement energy levels in large-area structures containing Si QDs in SiO2 and Si3N4 dielectrics. The confinement energy was found to be significantly lower when QDs were in close proximity to dopant ions in the dielectric. This effect was found to be smaller in Si3N4, while smaller QDs in SiO2 were highly susceptible to energy reduction. The energy reduction was found to follow a power law relationship with the QD size. (C) 2014 AIP Publishing LLC.

Original language	English
Article number	153102
Number of pages	3
Journal	Applied Physics Letters
Volume	104
Issue number	15
DOIs	https://doi.org/10.1063/1.4871576
Publication status	Published - 14 Apr 2014
Externally published	Yes

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10.1063/1.4871576

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abstract = "Modulation doping, an effective way to dope quantum dots (QDs), modifies the confinement energy levels in the QDs. We present a self-consistent full multi-grid solver to analyze the effect of modulation doping on the confinement energy levels in large-area structures containing Si QDs in SiO2 and Si3N4 dielectrics. The confinement energy was found to be significantly lower when QDs were in close proximity to dopant ions in the dielectric. This effect was found to be smaller in Si3N4, while smaller QDs in SiO2 were highly susceptible to energy reduction. The energy reduction was found to follow a power law relationship with the QD size. (C) 2014 AIP Publishing LLC.",

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AU - Veettil, B. Puthen

AU - Koenig, D.

AU - Patterson, R.

AU - Smyth, S.

AU - Conibeer, G.

PY - 2014/4/14

Y1 - 2014/4/14

N2 - Modulation doping, an effective way to dope quantum dots (QDs), modifies the confinement energy levels in the QDs. We present a self-consistent full multi-grid solver to analyze the effect of modulation doping on the confinement energy levels in large-area structures containing Si QDs in SiO2 and Si3N4 dielectrics. The confinement energy was found to be significantly lower when QDs were in close proximity to dopant ions in the dielectric. This effect was found to be smaller in Si3N4, while smaller QDs in SiO2 were highly susceptible to energy reduction. The energy reduction was found to follow a power law relationship with the QD size. (C) 2014 AIP Publishing LLC.

AB - Modulation doping, an effective way to dope quantum dots (QDs), modifies the confinement energy levels in the QDs. We present a self-consistent full multi-grid solver to analyze the effect of modulation doping on the confinement energy levels in large-area structures containing Si QDs in SiO2 and Si3N4 dielectrics. The confinement energy was found to be significantly lower when QDs were in close proximity to dopant ions in the dielectric. This effect was found to be smaller in Si3N4, while smaller QDs in SiO2 were highly susceptible to energy reduction. The energy reduction was found to follow a power law relationship with the QD size. (C) 2014 AIP Publishing LLC.

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Electronic confinement in modulation doped quantum dots

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